Interface quality and interface modes in the double quantum wells structure
E.M. Sheregii , D. Płoch , Tomasz Płociński , Wojciech Gębicki
AbstractThe results of investigations of the double quantum well structure (DQWs) of special engineering are reported. The scanning transmission electron microscopy (STEM) observations confirmed a high quality of interfaces and smooth change of the In-content in a rectangular shape QW. Micro-Raman experiment enabled to detect interface phonons in DQWs which are manifested in magnetophonon resonance. This contribution of interface phonons in the electron magneto-transport is important because as could be expected, the role of these phonons will increase in case of electron transport in the double quantum wires fabricated from DQWs investigated. © 2016 John Wiley & Sons, Ltd.
|Journal series||Surface and Interface Analysis, ISSN 0142-2421|
|Publication size in sheets||0.3|
|Keywords in English||Electron transport properties; High resolution transmission electron microscopy; Phonons; Quantum chemistry; Scanning electron microscopy; Semiconductor quantum wires; Transmission electron microscopy, Double quantum well; Double quantum well structures; Electron transport; Interface mode; Interface quality; Magneto-phonon resonances; Rectangular shapes; Scanning transmission electron microscopy, Semiconductor quantum wells|
|ASJC Classification||; ; ; ;|
|Score|| = 15.0, 07-11-2019, ArticleFromJournal|
= 20.0, 07-11-2019, ArticleFromJournal
|Publication indicators||= 0; = 0; : 2016 = 0.661; : 2016 = 1.132 (2) - 2016=1.23 (5)|
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