Dopant-induced random telegraph signal in nanoscale lateral silicon pn diodes at low temperatures

S. Purwiyanti , Roland Nowak , Moraru D. , Mizuno T. , Ryszard Jabłoński , Hartanto D.

Abstract

n/a
Author S. Purwiyanti - [National University Corporation Shizuoka University]
S. Purwiyanti,,
-
-
, Roland Nowak (FM / IMBE) - [Universytet Shizuoka, Japonia]
Roland Nowak,,
- The Institute of Metrology and Biomedical Engineering
- Universytet Shizuoka, Japonia
, Moraru D.
Moraru D.,,
-
, Mizuno T.
Mizuno T.,,
-
, Ryszard Jabłoński (FM / IMBE)
Ryszard Jabłoński,,
- The Institute of Metrology and Biomedical Engineering
, Hartanto D.
Hartanto D.,,
-
Journal seriesApplied Physics Letters, ISSN 0003-6951
Issue year2013
Vol103
Pages243102-243102-4
Publication size in sheets12155.1
Keywords in Polishpółprzewodniki samoistne, diody półprzewodnikowe, krzem, krzem na izolatorze
Keywords in Englishelemental semiconductors, semiconductor diodes, silicon, silicon-on-insulator
ASJC Classification3101 Physics and Astronomy (miscellaneous)
DOIDOI:10.1063/1.4841735
URL http://scitation.aip.org/content/aip/journal/apl/103/24/10.1063/1.4841735
Languageen angielski
Score (nominal)40
Score sourcejournalList
ScoreMinisterial score = 40.0, 17-09-2020, ArticleFromJournal
Ministerial score (2013-2016) = 40.0, 17-09-2020, ArticleFromJournal
Publication indicators WoS Citations = 5; Scopus Citations = 6; Scopus SNIP (Source Normalised Impact per Paper): 2013 = 1.634; WoS Impact Factor: 2013 = 3.515 (2) - 2013=3.739 (5)
Citation count*3 (2016-01-06)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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