Electrical properties of vertical GaN Schottky diodes on Ammono-GaN substrate

P. Kruszewski , P Prystawko , M. Grabowski , T. Sochacki , A. Sidor , Michał Bockowski , Jakub Maciej Jasiński , Lidia Łukasiak , Ryszard Kisiel , Mike Leszczyński

Abstract

We report on electrical properties of vertical n-GaN high voltage Schottky diodes (SBDs) grown by two different techniques: Metal Organic Chemical Vapor Deposition (MOCVD) and Hydride Vapor Phase Epitaxy (HVPE) on highly-conductive n-type Ammono-GaN substrate. The thermionic emission (TE) current model has been applied for diodes parameters analysis. The fabricated SBDs exhibited a breakdown voltage of 670 V and 220 V, barrier height of 1.05 eV and 0.92 eV, ideality factor of 1.65 and 1.42 and series resistance of 440 Ω and 12 Ω for HVPE and MOCVD samples, respectively. Finally, we demonstrate preliminary point defects analysis for both types of the samples.
Author P. Kruszewski - [High Pressure Research Center of the Polish Academy of Sciences]
P. Kruszewski,,
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, P Prystawko - [High Pressure Research Center of the Polish Academy of Sciences]
P Prystawko,,
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, M. Grabowski - [High Pressure Research Center of the Polish Academy of Sciences]
M. Grabowski,,
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, T. Sochacki - [High Pressure Research Center of the Polish Academy of Sciences]
T. Sochacki,,
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, A. Sidor - [High Pressure Research Center of the Polish Academy of Sciences]
A. Sidor,,
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, Michał Bockowski - [High Pressure Research Center of the Polish Academy of Sciences]
Michał Bockowski,,
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, Jakub Maciej Jasiński (FEIT / MO)
Jakub Maciej Jasiński,,
- The Institute of Microelectronics and Optoelectronics
, Lidia Łukasiak (FEIT / MO)
Lidia Łukasiak,,
- The Institute of Microelectronics and Optoelectronics
, Ryszard Kisiel (FEIT / MO)
Ryszard Kisiel,,
- The Institute of Microelectronics and Optoelectronics
, Mike Leszczyński - [High Pressure Research Center of the Polish Academy of Sciences]
Mike Leszczyński,,
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Journal seriesMaterials Science in Semiconductor Processing, ISSN 1369-8001, (A 30 pkt)
Issue year2019
Vol96
No15 June 2019
Pages132-136
Publication size in sheets0.5
ASJC Classification2210 Mechanical Engineering; 2211 Mechanics of Materials; 3104 Condensed Matter Physics; 2500 General Materials Science
DOIDOI:10.1016/j.mssp.2019.02.037
URL https://www.sciencedirect.com/science/article/pii/S1369800118316718#!
Languageen angielski
Score (nominal)30
ScoreMinisterial score = 30.0, 12-07-2019, ArticleFromJournal
Publication indicators Scopus Citations = 1; WoS Citations = 1; Scopus SNIP (Source Normalised Impact per Paper): 2017 = 0.992; WoS Impact Factor: 2017 = 2.593 (2) - 2017=2.4 (5)
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