Impact of nanocrystal(s) location on C-V-t and I-V-t characteristics of nc-MOS structures

Dominik Tanous , Andrzej Igor Mazurak , Bogdan Majkusiak

Abstract

MN-p-18:
Author Dominik Tanous (FEIT / MO)
Dominik Tanous,,
- The Institute of Microelectronics and Optoelectronics
, Andrzej Igor Mazurak (FEIT / MO)
Andrzej Igor Mazurak,,
- The Institute of Microelectronics and Optoelectronics
, Bogdan Majkusiak (FEIT / MO)
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
Pages1-2
Publication size in sheets0.3
Book Wiśniowski Piotr (eds.): Materiały Konferencyjne: XII Konferencja Naukowa Technologia Elektronowa, ELTE '2016, vol. PenDrive, 2016, Kraków, Polska, Katedra Elektroniki, Wydział Informatyki Elektroniki i Telekomunikacji Akademia Górniczo-Hutnicza im. Stanisława Staszica, 226 p.
Keywords in Englishmicroelectronics, MOS structures, nanocrystals, tunneling, modelling
ProjectNanophotonics with metal – group-IV-semiconductor nanocomposites: From single nanoobjects to functional ensembles (NaMSeN). Project leader: Beck Romuald, , Phone: (+48) 22 234 75 34, start date 01-02-2016, planned end date 31-01-2019, V4-Japan/01/NaMSeN/02/2015, Implemented
WEiTI Projects financed by NCRD [Projekty finansowane przez NCBiR (NCBR)]
Languageen angielski
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 15.0, 30-04-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 30-04-2020, BookChapterMatConfByIndicator
Publication indicators WoS Citations = 1; GS Citations = 2.0
Citation count*2 (2020-09-10)
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