Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET
Authors:
- Bartosz Lasek,
- Przemysław Trochimiuk,
- Rafał Kopacz,
- Jacek Rąbkowski
Abstract
This article discusses an active gate driver for a 1.7 kV/325 A SiC MOSFET module. The main purpose of the driver is to adjust the gate voltage in specified moments to speed up the turn-on cycle and reduce the amount of dissipated energy. Moreover, an adequate manipulation of the gate voltage is necessary as the gate current should be reduced during the rise of the drain current to avoid overshoots and oscillations. The gate voltage is switched at the right moments on the basis of the feedback signal provided from a measurement of the voltage across the parasitic source inductance of the module. This approach simplifies the circuit and provides no additional power losses in the measuring circuit. The paper contains the theoretical background and detailed description of the active gate driver design. The model of the parasitic-based active gate driver was verified using the double-pulse procedure both in Saber simulations and laboratory experiments. The active gate driver decreases the turn-on energy of a 1.7 kV/325 A SiC MOSFET by 7% comparing to a conventional gate driver (VDS = 900 V, ID = 270 A, RG = 20 Ω). Furthermore, the proposed active gate driver lowered the turn-on cycle time from 478 to 390 ns without any serious oscillations in the main circuit.
- Record ID
- WUT5c0a7b75f3054cfaa8d57135e381bd73
- Author
- Journal series
- Applied Sciences-Basel, ISSN 2076-3417, Monthly
- Issue year
- 2021
- Vol
- 11
- No
- 5
- Pages
- 1-16
- Publication size in sheets
- 0.75
- ASJC Classification
- ; ; ; ; ;
- DOI
- DOI:10.3390/app11052210 Opening in a new tab
- URL
- https://www.mdpi.com/2076-3417/11/5/2210 Opening in a new tab
- Language
- (en) English
- License
- File
-
- File: 1
- Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET, File WUT5c0a7b75f3054cfaa8d57135e381bd73.pdf / 4 MB
- WUT5c0a7b75f3054cfaa8d57135e381bd73.pdf
- publication date: 15-03-2021
- Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET, File WUT5c0a7b75f3054cfaa8d57135e381bd73.pdf / 4 MB
-
- Score (nominal)
- 100
- Score source
- journalList
- Score
- = 100.0, 10-01-2022, ArticleFromJournal
- Publication indicators
- = 0; : 2018 = 0.985; : 2018 (2 years) = 2.217 - 2018 (5 years) =2.287
- Uniform Resource Identifier
- https://repo.pw.edu.pl/info/article/WUT5c0a7b75f3054cfaa8d57135e381bd73/
- URN
urn:pw-repo:WUT5c0a7b75f3054cfaa8d57135e381bd73
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or PerishOpening in a new tab system.