Influence of the deposition process parameters on electophysical properties of Al2O3 thin films
Piotr Firek , Jacek Gryglewicz , Jakub Maciej Jasiński
AbstractOrthognonal matrixes designed to survey influence of specific magnetron-deposition proces parameters on elctro-physical properties allowed to calculate elctonic parameters as well to estimate the degree of influence od each investigated parameter. in this study atomic force micrscopy exhibited very smooth Al2O3 surface with roughness parameters within range of 1 nm. The refactive index calculated from ellipsometric measurement is about 1.6. The macimum electrical breake-down field of 0.5 MV/cm of erlatively thin Al2O3 layers allow to create electonic deveces for specific applications in combination with other wide bandgap materials (e.g. SiC). The presented optimization technique allow to highlight the most important deposition-process parameters of thin Al2O3 and to exclude those which the degree of influence is at lowest level. this is crucial to further inbestigation and focus on designated parameters which will be the topic of futute research. Novel simply strategy of selecting base parameters such as power. etc.combined with characterization methods will be presented and discussed.
|Book||Organizing Committee of ISSE: 36th International Spring Seminar on Electronics Technology (ISSE), 2013, 2013, USA, IEEE Xplore Digital Library, ISBN 978-606-613-064-6, 447 p.|
|Keywords in English||aluminum oxide, electrical characterization, ellipsometry, magneron sputtering|
|Score|| = 10.0, 04-09-2019, BookChapterMatConfByIndicator|
= 15.0, 04-09-2019, BookChapterMatConfByIndicator
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