Use of computer modeling for defect engineering in Czochralski silicon growth

V. Artemyev , A. Smirnov , V. Kalaev , V. Mamedov , A. Sid’ko , Tomasz Wejrzanowski , Mateusz Grybczuk , P. Dold , R. Kunert

Abstract

The yield and quality of silicon wafers are mostly determined by defects, including grain boundaries, dislocations, vacancies, interstitials, and vacancy and oxygen clusters. Active generation and multiplication of dislocations during Czochralski monosilicon crystal growth is almost always followed by a transition to multicrystalline material and is called structure loss. Possible factors in structure loss are related to high thermal stresses, fluctuations of local crystallization rate caused by melt flow turbulence, melt undercooling and incorporation of solid particles from the melt into the crystal. Experimental analysis of dislocation density distributions in grown crystals contributes to an understanding of the key reasons for structure loss: particle incorporation at the crystallization front and strong fluctuations of crystallization rate with temporal remelting. Comparison of experimental dislocation density measurements and modeling results calculated using the Alexander-Haasen model showed good agreement for silicon samples. The Alexander-Haasen model provides reasonably accurate results for dislocation density accompanying structure loss phenomena and can be used to predict dislocation density and residual stresses in multicrystalline Czochralski silicon ingots, which are grown for the purpose of manufacturing polysilicon rods for Siemens reactors and silicon construction elements.
Author V. Artemyev
V. Artemyev,,
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, A. Smirnov
A. Smirnov,,
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, V. Kalaev
V. Kalaev,,
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, V. Mamedov
V. Mamedov,,
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, A. Sid’ko
A. Sid’ko,,
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, Tomasz Wejrzanowski (FMSE / DMD)
Tomasz Wejrzanowski,,
- Division of Materials Design
, Mateusz Grybczuk (FMSE / DMD)
Mateusz Grybczuk,,
- Division of Materials Design
, P. Dold
P. Dold,,
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, R. Kunert
R. Kunert,,
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Journal seriesJournal of Power Technologies, ISSN 2083-4187, e-ISSN 2083-4195
Issue year2019
Vol99
No2
Pages163-169
Publication size in sheets0.5
Keywords in EnglishCzochralski silicon growth, structure loss, dislocation density
ASJC Classification2102 Energy Engineering and Power Technology
URL http://papers.itc.pw.edu.pl/index.php/JPT/article/view/1436
Languagepl polski
File
1436-6064-1-PB.pdf 1.3 MB
Score (nominal)40
Score sourcejournalList
ScoreMinisterial score = 40.0, 01-01-2020, ArticleFromJournal
Publication indicators WoS Citations = 0; Scopus SNIP (Source Normalised Impact per Paper): 2017 = 0.744
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