Effect of annealing on optical, mechanical, electrical properties and structure of scandium oxide films

Alexandr Belosludtsev , Yuri Yakimov , Robert Paweł Mroczyński , Sandra Stanionytė , Martynas Skapas , Deividas Buinovskis , Naglis Kyžas

Abstract

Scandium oxide (Sc2O3) films are deposited by reactive magnetron sputtering. The effects of annealing on structure, as well as optical, mechanical, and electrical properties are investigated. The detailed investigation of the mechanical properties, high load indentation resistance in combination with electrical, optical properties is done. It is found that after annealing at 300 °C extinction coefficient and refractive index were slightly decreased. It is reported that before and after annealing, Sc2O3 films with cubic phase remained very hard (19 GPa) and resistant to high load (up to 1N) indentation test. Moreover, the effects of post‐deposition annealing on electrical characteristics of Metal‐Insulator‐Semiconductor (MIS) structures with Sc2O3 gate dielectric layer is investigated. After the annealing procedure, the MIS structures are characterized by lower frequency dispersion, lower flat‐band voltage value, as well as lower effective charge density. The insulating properties remained at similar level compared to the devices fabricated with as‐deposited dielectric material. The findings that are in this study make the investigated scandium oxide films a promising material for various applications in optics, optoelectronic, and electronic semiconductor structures.
Author Alexandr Belosludtsev
Alexandr Belosludtsev,,
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, Yuri Yakimov
Yuri Yakimov,,
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, Robert Paweł Mroczyński (FEIT / MO)
Robert Paweł Mroczyński,,
- The Institute of Microelectronics and Optoelectronics
, Sandra Stanionytė
Sandra Stanionytė,,
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, Martynas Skapas
Martynas Skapas,,
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, Deividas Buinovskis
Deividas Buinovskis,,
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, Naglis Kyžas
Naglis Kyžas,,
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Journal seriesPhysica Status Solidi A-Applications and Materials Science, ISSN 1862-6300, [1862-6319], (N/A 70 pkt)
Issue year2019
NoJune
Pages1-8
Publication size in sheets0.5
ASJC Classification2505 Materials Chemistry; 2208 Electrical and Electronic Engineering; 2508 Surfaces, Coatings and Films; 3110 Surfaces and Interfaces; 3104 Condensed Matter Physics; 2504 Electronic, Optical and Magnetic Materials
Abstract in original languageScandium oxide (Sc2O3) films are deposited by reactive magnetron sputtering. The effects of annealing on structure, as well as optical, mechanical, and electrical properties are investigated. The detailed investigation of the mechanical properties, high load indentation resistance in combination with electrical, optical properties is done. It is found that after annealing at 300 °C extinction coefficient and refractive index were slightly decreased. It is reported that before and after annealing, Sc2O3 films with cubic phase remained very hard (19 GPa) and resistant to high load (up to 1N) indentation test. Moreover, the effects of post‐deposition annealing on electrical characteristics of Metal‐Insulator‐Semiconductor (MIS) structures with Sc2O3 gate dielectric layer is investigated. After the annealing procedure, the MIS structures are characterized by lower frequency dispersion, lower flat‐band voltage value, as well as lower effective charge density. The insulating properties remained at similar level compared to the devices fabricated with as‐deposited dielectric material. The findings that are in this study make the investigated scandium oxide films a promising material for various applications in optics, optoelectronic, and electronic semiconductor structures.
DOIDOI:10.1002/pssa.201900122
URL https://onlinelibrary.wiley.com/doi/abs/10.1002/pssa.201900122
Languageen angielski
Score (nominal)70
Score sourcejournalList
ScoreMinisterial score = 70.0, 20-10-2019, ArticleFromJournal
Publication indicators Scopus SNIP (Source Normalised Impact per Paper): 2016 = 0.849; WoS Impact Factor: 2017 = 1.795 (2) - 2017=1.645 (5)
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