Technology and characterization of Thin-Film Transistors (TFTs) with a-IGZO semiconductor and high-k dielectric layer
Robert Paweł Mroczyński , Łukasz Wachnicki , Sylwia Gierałtowska
AbstractIn this work, we present the design of the technology and fabrication of TFTs with amorphous IGZO semiconductor and high-k gate dielectric layer in the form of hafnium oxide (HfOx). In the course of this work, the IGZO fabrication was optimized by means of Taguchi orthogonal tables approach in order to obtain an active semiconductor with reasonable high concentration of charge carriers, low roughness and relatively high mobility. The obtained Thin-Film Transistors can be characterized by very good electrical parameters, i.e., the effective mobility (μeff ≈ 12.8 cm2V-1s-1) significantly higher than that for a-Si TFTs (μeff ≈ 1 cm2V-1s-1). However, the value of sub-threshold swing (i.e., 640 mV/dec) points that the interfacial properties of IGZO/HfOx stack is characterized by high value of interface states density (Dit) which, in turn, demands further optimization for future applications of the demonstrated TFT structures.
|Book||Swatowska Barbara, Maziarz Wojciech, Pisarkiewicz Tadeusz, Kucewicz Wojciech (eds.): Proceedings of SPIE Electron Technology Conference 2016, vol. 1, no. 10175, 2016, SPIE, ISBN 9781510608436, 354 p., DOI:10.1117/12.2270351|
|Keywords in English||Semiconductors; Thin films; Transistors; Fabrication; Hafnium; Interfaces; Oxides; Amorphous silicon|
|Score|| = 15.0, 27-03-2017, BookChapterMatConfByIndicator|
= 15.0, 27-03-2017, BookChapterMatConfByIndicator
|Citation count*||0 (2018-07-16)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.