Termiczny model tranzystora HEMT na podłożu GaN/SiC

Paweł Kopyt , Wojciech Wojtasiak , Daniel Gryglewski , Wojciech Gwarek

Abstract

n/a
Author Paweł Kopyt (FEIT / RE)
Paweł Kopyt,,
- The Institute of Radioelectronics
, Wojciech Wojtasiak (FEIT / RE)
Wojciech Wojtasiak,,
- The Institute of Radioelectronics
, Daniel Gryglewski (FEIT / RE)
Daniel Gryglewski,,
- The Institute of Radioelectronics
, Wojciech Gwarek (FEIT / RE)
Wojciech Gwarek,,
- The Institute of Radioelectronics
Journal seriesElektronika - konstrukcje, technologie, zastosowania, ISSN 0033-2089
Issue year2013
No9
Pages22-25
Publication size in sheets0.5
Languagepl polski
LicenseJournal (articles only); author's original; Other open licence; after publication
Score (nominal)8
ScoreMinisterial score = 5.0, 04-09-2019, ArticleFromJournal
Ministerial score (2013-2016) = 8.0, 04-09-2019, ArticleFromJournal
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