Numerical design of Metal-Organic Vapour Phase Epitaxy process for gallium nitride epitaxial growth

Jakub Skibiński , Piotr Caban , Tomasz Wejrzanowski , Graeme J. Oliver , Krzysztof Kurzydłowski


The paper presents the results of numerical simulations and experimental measurements of the epitaxial growth of gallium nitride in Metal Organic Vapor Phase Epitaxy within a AIX-200/4RF-S reactor. The aim was to develop optimal process conditions for obtaining the most homogeneous crystal layer. Since there are many factors influencing the chemical reactions on the crystal growth area such as: temperature, pressure, gas composition or reactor geometry, it is difficult to design an optimal process. In this study various process pressures and hydrogen volumetric flow rates have been considered. Due to the fact that it is not economically viable to test every combination of possible process conditions experimentally, detailed 3D modeling has been used to get an overview of the influence of process parameters. Numerical simulations increased the understanding of the epitaxial process by calculating the heat and mass transfer distribution during the growth of gallium nitride. Appropriate chemical reactions were included in the numerical model which allowed for the calculation of the growth rate of the substrate. The results obtained have been applied to optimize homogeneity of GaN film thickness and its growth rate.
Author Jakub Skibiński (FMSE / DMD)
Jakub Skibiński,,
- Division of Materials Design
, Piotr Caban - [Instytutu Technologii Materialow Elektronicznych w Warszawie]
Piotr Caban,,
, Tomasz Wejrzanowski (FMSE / DMD)
Tomasz Wejrzanowski,,
- Division of Materials Design
, Graeme J. Oliver - [Cape Peninsula University of Technology]
Graeme J. Oliver,,
, Krzysztof Kurzydłowski (FMSE / DMD)
Krzysztof Kurzydłowski,,
- Division of Materials Design
Journal seriesCrystal Research and Technology, ISSN 1521-4079, [0232-1300]
Issue year2016
Publication size in sheets0.5
Keywords in PolishEpitaksja z fazy gazowej z użyciem związków metaloorganicznych, azotek galu, metoda objętości skończonych
Keywords in Englishmetal organic vapor phase epitaxy, gallium nitride, finite volume method
ASJC Classification3104 Condensed Matter Physics; 2500 General Materials Science; 1600 General Chemistry
Languageen angielski
Score (nominal)20
Score sourcejournalList
ScoreMinisterial score = 20.0, 01-02-2020, ArticleFromJournal
Ministerial score (2013-2016) = 20.0, 01-02-2020, ArticleFromJournal
Publication indicators WoS Citations = 1; Scopus Citations = 1; Scopus SNIP (Source Normalised Impact per Paper): 2016 = 0.505; WoS Impact Factor: 2017 = 1.122 (2) - 2017=1.059 (5)
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