Numerical design of Metal-Organic Vapour Phase Epitaxy process for gallium nitride epitaxial growth

Jakub Skibiński , Piotr Caban , Tomasz Wejrzanowski , Graeme J. Oliver , Krzysztof Kurzydłowski

Abstract

The paper presents the results of numerical simulations and experimental measurements of the epitaxial growth of gallium nitride in Metal Organic Vapor Phase Epitaxy within a AIX-200/4RF-S reactor. The aim was to develop optimal process conditions for obtaining the most homogeneous crystal layer. Since there are many factors influencing the chemical reactions on the crystal growth area such as: temperature, pressure, gas composition or reactor geometry, it is difficult to design an optimal process. In this study various process pressures and hydrogen volumetric flow rates have been considered. Due to the fact that it is not economically viable to test every combination of possible process conditions experimentally, detailed 3D modeling has been used to get an overview of the influence of process parameters. Numerical simulations increased the understanding of the epitaxial process by calculating the heat and mass transfer distribution during the growth of gallium nitride. Appropriate chemical reactions were included in the numerical model which allowed for the calculation of the growth rate of the substrate. The results obtained have been applied to optimize homogeneity of GaN film thickness and its growth rate.
Author Jakub Skibiński ZPM
Jakub Skibiński,,
- Division of Materials Design
, Piotr Caban
Piotr Caban,,
-
, Tomasz Wejrzanowski ZPM
Tomasz Wejrzanowski,,
- Division of Materials Design
, Graeme J. Oliver
Graeme J. Oliver,,
-
, Krzysztof Kurzydłowski ZPM
Krzysztof Kurzydłowski,,
- Division of Materials Design
Journal seriesCrystal Research and Technology, ISSN 1521-4079 [0232-1300]
Issue year2016
Vol51
No12
Pages762-770
Publication size in sheets0.5
Keywords in PolishEpitaksja z fazy gazowej z użyciem związków metaloorganicznych, azotek galu, metoda objętości skończonych
Keywords in Englishmetal organic vapor phase epitaxy, gallium nitride, finite volume method
DOIDOI:10.1002/crat.201600265
URL http://onlinelibrary.wiley.com/doi/10.1002/crat.201600265/abstract
Languageen angielski
Score (nominal)20
ScoreMinisterial score [Punktacja MNiSW] = 20.0, 28-11-2017, ArticleFromJournal
Ministerial score (2013-2016) [Punktacja MNiSW (2013-2016)] = 20.0, 28-11-2017, ArticleFromJournal
Publication indicators WoS Impact Factor [Impact Factor WoS]: 2013 = 1.164 (2) - 2013=1.046 (5)
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