Modeling of the influence of deep majority carrier traps on photo-induced current transients in Cu(In, Ga)Se2 layers

Marek Maciaszek , Paweł Zabierowski

Abstract

n/a
Author Marek Maciaszek (FP / SD)
Marek Maciaszek,,
- Semiconductors Division
, Paweł Zabierowski (FP / SD)
Paweł Zabierowski,,
- Semiconductors Division
Pages3304-3306
Publication size in sheets0.3
Book 2013 IEEE 39th Photovoltaic Specialists Conference, 2013, IEEE, DOI:10.1109/PVSC.2013.6744984
DOIDOI:10.1109/PVSC.2013.6745157
Languageen angielski
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 10.0, 29-12-2019, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 29-12-2019, BookChapterMatConfByIndicator
Publication indicators WoS Citations = 0; Scopus Citations = 0
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