Influence of relaxation processes on the evaluation of the metastable defect density in Cu(In,Ga)Se2

Marek Maciaszek , Paweł Zabierowski

Abstract

In this contribution, we investigated by means of numerical simulations the influence of relaxation processes related to metastable defects on electrical characteristics of Cu(In,Ga)Se2. In particular, we analyzed the relaxation of a metastable state induced by illumination at a fixed temperature as well as the dependence of the hole concentration on the temperature during cooling. The knowledge of these two relaxation processes is crucial in the evaluation of the hole concentration in the relaxed state and after light soaking. We have shown that the distribution of the metastable defects can be considered frozen below 200 K. The hole capture cross section was estimated as ∼3 × 10-15 cm2. It was shown that the usually used cooling rates may lead to relevant changes of the hole concentration. We calculated the lower limit of the hole concentration after cooling, and we presented how it depends on densities of shallow acceptors and metastable defects. Moreover, we proposed a method which allows for the evaluation of shallow acceptor and metastable defect densities from two capacitance-voltage profiles measured in the relaxed and light soaking states. Finally, we indicated experimental conditions in which the influence of relaxation processes on the accuracy of this method is the smallest. © 2016 Author(s).
Author Marek Maciaszek (FP / SD)
Marek Maciaszek,,
- Semiconductors Division
, Paweł Zabierowski (FP / SD)
Paweł Zabierowski,,
- Semiconductors Division
Journal seriesJournal of Applied Physics, ISSN 0021-8979, (A 35 pkt)
Issue year2016
Vol119
No21
Pages1-12
Publication size in sheets0.55
Keywords in EnglishCapacitance; Cooling; Defect density; Defects; Gallium; Relaxation processes, Capacitance-voltage profiles; Cu (in ,ga)se; Electrical characteristic; Experimental conditions; Fixed temperature; Hole capture cross sections; Meta-stable state; Metastable defect, Hole concentration
ASJC Classification3100 General Physics and Astronomy
DOIDOI:10.1063/1.4953145
URL https://www.scopus.com/inward/record.uri?eid=2-s2.0-84974651716&partnerID=40&md5=146a0c327bb17c546474f989db453042
Languageen angielski
Score (nominal)35
ScoreMinisterial score = 30.0, 01-10-2019, ArticleFromJournal
Ministerial score (2013-2016) = 35.0, 01-10-2019, ArticleFromJournal
Publication indicators WoS Citations = 5; Scopus SNIP (Source Normalised Impact per Paper): 2016 = 0.977; WoS Impact Factor: 2016 = 2.068 (2) - 2016=2.103 (5)
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