Hydrogen sensor based on field effect transistor with C-Pd layer

Piotr Firek , Sławomir Krawczyk , Halina Wronka , Elżbieta Czerwosz , Jan Szmidt

Abstract

ISFET (Ion Sensitive Field Effect Transistors) microsensors are widely used for pH measurements as well as analytical and biomedical applications. At the same time, ISFET is a good candidate for testing various materials for their applications in sensitive membranes. For example, hydrogen sensitive carbonaceous films containing Pd nanocrystallites (C–Pd) make this material very interesting for sensor applications. A cost effective silicon technology was selected to fabricate n-channel transistors. The structures were coupled to specially designed double-sided PCB (Printed Circuit Board) holder. The holder enables assembly of the structure as part of an automatic stand. The last step of production of MIS structures was deposition of the C–Pd layer. The C–Pd films were fabricated by the Physical Vapor Deposition (PVD) method in which C60 and palladium acetate were evaporated. Electrical resistance of structures with C–Pd films was measured during their interaction with hydrogen. Finally, a new type of highly sensitive FET hydrogen sensor with C–Pd layer was demonstrated and characterized.
Author Piotr Firek (FEIT / MO)
Piotr Firek,,
- The Institute of Microelectronics and Optoelectronics
, Sławomir Krawczyk (FEIT / ICS)
Sławomir Krawczyk,,
- The Institute of Computer Science
, Halina Wronka
Halina Wronka,,
-
, Elżbieta Czerwosz
Elżbieta Czerwosz,,
-
, Jan Szmidt (FEIT / MO)
Jan Szmidt,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesMetrology and Measurement Systems, [Metrologia i Systemy Pomiarowe, Metrology and Measuring Systems], ISSN 0860-8229, e-ISSN 2300-1941
Issue year2020
Vol27
No2
Pages313-321
ASJC Classification2207 Control and Systems Engineering; 3105 Instrumentation
DOIDOI:10.24425/mms.2020.132777
Languageen angielski
Score (nominal)100
Score sourcejournalList
ScoreMinisterial score = 100.0, 08-09-2020, ArticleFromJournal
Publication indicators Scopus Citations = 0; WoS Citations = 0; Scopus SNIP (Source Normalised Impact per Paper): 2016 = 1.228; WoS Impact Factor: 2018 = 1.096 (2) - 2018=1.149 (5)
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