Reactive Ion Etching (RIE) of silicon for the technology of nanoelectronic devices and structures
Piotr Wiśniewski , Robert Paweł Mroczyński , Bogdan Majkusiak
AbstractIn this work we present the investigations aimed at the optimization of the technology of Reactive Ion Etching in sulfur hexafluoride (SF6) plasma of silicon, which is necessary during fabrication of TFET according to the original concept of the device designed at Institute of Microelectronics and Optoelectronics (IMiO) of Warsaw University of Technology (WUT) laboratory. We have performed a two-stage optimization of RIE process’ parameters in order to obtain a controllable process characterized by good selectivity and anisotropy. Presented in this study findings have shown that the SF6 flow most significantly influence onto the RIE process’ results. Selected and optimized processing step will be used in the course of the fabrication of TFET devices, in future.
|Publication size in sheets||0.5|
|Book||Swatowska Barbara, Maziarz Wojciech, Pisarkiewicz Tadeusz, Kucewicz Wojciech (eds.): Proceedings of SPIE Electron Technology Conference 2016, vol. 1, no. 10175, 2016, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9781510608436, 354 p., DOI:10.1117/12.2270351|
|Keywords in English||Nanoelectronics; Reactive ion etching; Silicon; Fabrication; Microelectronics; Optoelectronics; Plasmas; Sulfur; Anisotropy|
|Score|| = 15.0, 18-02-2020, BookChapterMatConfByIndicator|
= 15.0, 18-02-2020, BookChapterMatConfByIndicator
|Publication indicators||= 2; = 2; = 2.0|
|Citation count*||2 (2020-09-24)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.