Reactive Ion Etching (RIE) of silicon for the technology of nanoelectronic devices and structures

Piotr Wiśniewski , Robert Paweł Mroczyński , Bogdan Majkusiak

Abstract

In this work we present the investigations aimed at the optimization of the technology of Reactive Ion Etching in sulfur hexafluoride (SF6) plasma of silicon, which is necessary during fabrication of TFET according to the original concept of the device designed at Institute of Microelectronics and Optoelectronics (IMiO) of Warsaw University of Technology (WUT) laboratory. We have performed a two-stage optimization of RIE process’ parameters in order to obtain a controllable process characterized by good selectivity and anisotropy. Presented in this study findings have shown that the SF6 flow most significantly influence onto the RIE process’ results. Selected and optimized processing step will be used in the course of the fabrication of TFET devices, in future.
Author Piotr Wiśniewski IMiO
Piotr Wiśniewski,,
- The Institute of Microelectronics and Optoelectronics
, Robert Paweł Mroczyński IMiO
Robert Paweł Mroczyński,,
- The Institute of Microelectronics and Optoelectronics
, Bogdan Majkusiak IMiO
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
Pages1-7
Book Swatowska Barbara, Maziarz Wojciech, Pisarkiewicz Tadeusz, Kucewicz Wojciech (eds.): Proceedings of SPIE Electron Technology Conference 2016, vol. 1, no. 10175, 2016, SPIE, ISBN 9781510608436, 354 p., DOI:10.1117/12.2270351
Keywords in EnglishNanoelectronics; Reactive ion etching; Silicon; Fabrication; Microelectronics; Optoelectronics; Plasmas; Sulfur; Anisotropy
DOIDOI:10.1117/12.2261676
URL http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2595269
Languageen angielski
Score (nominal)15
ScoreMinisterial score = 15.0, 27-03-2017, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 27-03-2017, BookChapterMatConfByIndicator
Citation count*2 (2018-02-24)
Additional fields
Numer pracy101750F
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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