Optimization of buffer-window layer system for CIGS thin film devices with indium sulphide buffer by in-line evaporation

S Spiering , A. Nowitzki , F. Kessler , Małgorzata Igalson , Heba Abdel Maksoud

Abstract

Compound In2S3 powder was evaporated on Cu(In,Ga)Se2 substrates from the ZSW inline multi-stage co-evaporation process. Laboratory devices with the complete layer structure Mo/CIGS/In2Sx/i-ZnO/ZnO:Al/Ni–Al grid on 0.5 cm2 total cell area were prepared and analysed for their J–V characteristics. A post-annealing step in air after completing the device is essential to enhance the cell performance. In this work the influence of window process conditions like process temperature, layer thickness and sputtering gas composition on the cell characteristics was investigated. Electrical characterisation by temperature-dependent current voltage and admittance spectroscopy were performed to better understand the impact of buffer parameters on electrical transport. By optimization of the buffer layer thickness in combination with window layer variations, cell efficiencies >16% could be achieved. A record cell efficiency of 18.2% with anti-reflective coating was obtained.
Author S Spiering
S Spiering,,
-
, A. Nowitzki
A. Nowitzki,,
-
, F. Kessler
F. Kessler,,
-
, Małgorzata Igalson ZP
Małgorzata Igalson,,
- Semiconductors Division
, Heba Abdel Maksoud ZP
Heba Abdel Maksoud,,
- Semiconductors Division
Journal seriesSolar Energy Materials & Solar Cells, ISSN 0927-0248
Issue year2016
Vol144
Pages544-550
Publication size in sheets0.5
Keywords in English CIGS; In2S3; Buffer layer; Thermal evaporation; Electrical transport
DOIDOI:10.1016/j.solmat.2015.09.38
URL http://dx.doi.org/10.1016/j.solmat.2015.09.038
Languageen angielski
Score (nominal)40
ScoreMinisterial score = 40.0, 28-11-2017, ArticleFromJournal
Ministerial score (2013-2016) = 40.0, 28-11-2017, ArticleFromJournal
Publication indicators WoS Impact Factor: 2016 = 4.784 (2) - 2016=4.799 (5)
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