Optimization of buffer-window layer system for CIGS thin film devices with indium sulphide buffer by in-line evaporation

S Spiering , A. Nowitzki , F. Kessler , Małgorzata Igalson , Heba Abdel Maksoud


Compound In2S3 powder was evaporated on Cu(In,Ga)Se2 substrates from the ZSW inline multi-stage co-evaporation process. Laboratory devices with the complete layer structure Mo/CIGS/In2Sx/i-ZnO/ZnO:Al/Ni–Al grid on 0.5 cm2 total cell area were prepared and analysed for their J–V characteristics. A post-annealing step in air after completing the device is essential to enhance the cell performance. In this work the influence of window process conditions like process temperature, layer thickness and sputtering gas composition on the cell characteristics was investigated. Electrical characterisation by temperature-dependent current voltage and admittance spectroscopy were performed to better understand the impact of buffer parameters on electrical transport. By optimization of the buffer layer thickness in combination with window layer variations, cell efficiencies >16% could be achieved. A record cell efficiency of 18.2% with anti-reflective coating was obtained.
Author S Spiering
S Spiering,,
, A. Nowitzki
A. Nowitzki,,
, F. Kessler
F. Kessler,,
, Małgorzata Igalson (FP / SD)
Małgorzata Igalson,,
- Semiconductors Division
, Heba Abdel Maksoud (FP / SD)
Heba Abdel Maksoud,,
- Semiconductors Division
Journal seriesSolar Energy Materials & Solar Cells, ISSN 0927-0248
Issue year2016
Publication size in sheets0.5
Keywords in English CIGS; In2S3; Buffer layer; Thermal evaporation; Electrical transport
ASJC Classification2508 Surfaces, Coatings and Films; 2105 Renewable Energy, Sustainability and the Environment; 2504 Electronic, Optical and Magnetic Materials
URL http://dx.doi.org/10.1016/j.solmat.2015.09.038
Languageen angielski
Score (nominal)40
Score sourcejournalList
ScoreMinisterial score = 40.0, 01-02-2020, ArticleFromJournal
Ministerial score (2013-2016) = 40.0, 01-02-2020, ArticleFromJournal
Publication indicators Scopus Citations = 21; WoS Citations = 14; Scopus SNIP (Source Normalised Impact per Paper): 2016 = 1.71; WoS Impact Factor: 2016 = 4.784 (2) - 2016=4.799 (5)
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