Electrical characterization of ZnO/4H-SiC n–p heterojunction diode
Norbert Kwietniewski , Monika Masłyk , Aleksander Werbowy , Andrzej Taube , Sylwia Gierałtowska , Łukasz Wachnicki , Mariusz Sochacki
AbstractThe structure and electrical properties of zinc oxide (ZnO) thin films fabricated by atomic layer deposition (ALD) as well as electrical properties of ZnO/4H-SiC n–p heterojunction diodes were investigated. Hall measurements of ZnO films show their n-type high intrinsic conductivity. Structural characterization of the ZnO layers performed using X-ray diffraction show their polycrystalline morphology. Aluminum (Al) ohmic contacts fabricated to n-ZnO demonstrate linear characteristics and low resistivities. The I–V measurements of ZnO/4H-SiC n–p heterojunction showed strong diode-like behavior with the low leakage current, turn-on voltage of around 1.7 V, ideality factor of 1.17, and high rectification ratio. Extracting the built-in potential (1.71 V) from the C–V measurements allowed to determine band offsets and thus the flat-band energy diagram of produced heterostructure.
|Journal series||Physica Status Solidi A-Applications and Materials Science, ISSN 1862-6300 [1862-6319]|
|Publication size in sheets||0.5|
|Keywords in English||electrical properties;heterojunctions;p–n diodes;SiC;ZnO|
|project||xxx. Project leader: Szmidt Jan,
, Phone: (48 22) 234 75 99; 234 77 76, application date 31-08-2013, start date 03-06-2013, planned end date 02-06-2018, UMO-2012/06/A/ST7/00398, Implemented
|Score|| = 20.0, 27-03-2017, ArticleFromJournal|
= 25.0, 27-03-2017, ArticleFromJournal
|Publication indicators||: 2016 = 1.775 (2) - 2016=1.588 (5)|
|Citation count*||3 (2018-02-19)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.