Electrical characterization of ZnO/4H-SiC n–p heterojunction diode

Norbert Kwietniewski , Monika Masłyk , Aleksander Werbowy , A. Taube , Sylwia Gierałtowska , Łukasz Wachnicki , Mariusz Sochacki


The structure and electrical properties of zinc oxide (ZnO) thin films fabricated by atomic layer deposition (ALD) as well as electrical properties of ZnO/4H-SiC n–p heterojunction diodes were investigated. Hall measurements of ZnO films show their n-type high intrinsic conductivity. Structural characterization of the ZnO layers performed using X-ray diffraction show their polycrystalline morphology. Aluminum (Al) ohmic contacts fabricated to n-ZnO demonstrate linear characteristics and low resistivities. The I–V measurements of ZnO/4H-SiC n–p heterojunction showed strong diode-like behavior with the low leakage current, turn-on voltage of around 1.7 V, ideality factor of 1.17, and high rectification ratio. Extracting the built-in potential (1.71 V) from the C–V measurements allowed to determine band offsets and thus the flat-band energy diagram of produced heterostructure.
Author Norbert Kwietniewski (FEIT / MO)
Norbert Kwietniewski,,
- The Institute of Microelectronics and Optoelectronics
, Monika Masłyk (FEIT / MO)
Monika Masłyk,,
- The Institute of Microelectronics and Optoelectronics
, Aleksander Werbowy (FEIT / MO)
Aleksander Werbowy,,
- The Institute of Microelectronics and Optoelectronics
, A. Taube - Institute of Electron Technology (ITE) [Warsaw University of Technology (PW)]
A. Taube,,
- Politechnika Warszawska
, Sylwia Gierałtowska - [Institute of Physics of the Polish Academy of Sciences]
Sylwia Gierałtowska,,
, Łukasz Wachnicki - [Institute of Physics of the Polish Academy of Sciences]
Łukasz Wachnicki,,
, Mariusz Sochacki (FEIT / MO)
Mariusz Sochacki,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesPhysica Status Solidi A-Applications and Materials Science, ISSN 1862-6300, [1862-6319]
Issue year2016
Publication size in sheets0.5
Keywords in Englishelectrical properties;heterojunctions;p–n diodes;SiC;ZnO
ASJC Classification2505 Materials Chemistry; 2208 Electrical and Electronic Engineering; 2508 Surfaces, Coatings and Films; 3110 Surfaces and Interfaces; 3104 Condensed Matter Physics; 2504 Electronic, Optical and Magnetic Materials
URL http://onlinelibrary.wiley.com/doi/10.1002/pssa.201532667/abstract
Projectxxx. Project leader: Szmidt Jan, , Phone: (48 22) 234 75 99; 234 77 76, application date 31-08-2013, start date 03-06-2013, planned end date 02-06-2018, end date 02-08-2018, UMO-2012/06/A/ST7/00398, Completed
WEiTI Projects financed by NSC [Projekty finansowane przez NCN]
Languageen angielski
Score (nominal)25
Score sourcejournalList
ScoreMinisterial score = 20.0, 12-02-2020, ArticleFromJournal
Ministerial score (2013-2016) = 25.0, 12-02-2020, ArticleFromJournal
Publication indicators Scopus Citations = 4; WoS Citations = 4; GS Citations = 4.0; Scopus SNIP (Source Normalised Impact per Paper): 2016 = 0.849; WoS Impact Factor: 2016 = 1.775 (2) - 2016=1.588 (5)
Citation count*4 (2020-08-04)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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