Technology and characterization of 4H-SiC p-i-n junctions

Andrzej Kociubiński , Mariusz Duk , M. Małysk , Norbert Kwietniewski , Mariusz Sochacki , Michał Borecki , Michael L. Korwin-Pawlowski


Silicon Carbide (SiC) photodiodes have been proposed in recent years for ultraviolet (UV) light detection because of their robustness even in harsh environments, high quantum efficiency in all the UV range (200nm-400nm), excellent visible and infra-red blindness excluding UV filters implementation, low dark current and high speed. 4H-SiC has a bandgap three times larger (3.26eV) than Si and, thus, SiC detectors should have much higher sensitivity than Si detectors. In this paper, we present an overview of results on 4H-SiC p-i-n junctions fabrication and characterization. We used implantation technique to obtain p-region of the investigated structure. The ohmic contacts were formed using evaporation, etching and lift-off. Current-voltage, contact resistance and electroluminescence are the main characteristics of the presented devices. All the diodes showed excellent rectification with leakage current density of less than 10-9A/cm2.
Author Andrzej Kociubiński - [Politechnika Lubelska]
Andrzej Kociubiński,,
, Mariusz Duk - [Politechnika Lubelska (PL)]
Mariusz Duk,,
- Politechnika Lubelska
, M. Małysk
M. Małysk,,
, Norbert Kwietniewski (FEIT / MO)
Norbert Kwietniewski,,
- The Institute of Microelectronics and Optoelectronics
, Mariusz Sochacki (FEIT / MO)
Mariusz Sochacki,,
- The Institute of Microelectronics and Optoelectronics
, Michał Borecki (FEIT / MO)
Michał Borecki,,
- The Institute of Microelectronics and Optoelectronics
, Michael L. Korwin-Pawlowski - [Universite du Quebec en Outaouais]
Michael L. Korwin-Pawlowski,,
Book Romaniuk Ryszard (eds.): Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013, vol. 8903, 2013, SPIE P.O. Box 10, Bellingham, Washington 98227-0010 USA , SPIE, ISBN 9780819497857, [ISSN 0277-786X ], 410 p., DOI:10.1117/12.2049644
Languageen angielski
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 10.0, 29-08-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 29-08-2020, BookChapterMatConfByIndicator
Publication indicators WoS Citations = 5; Scopus Citations = 12; GS Citations = 15.0
Citation count*15 (2020-09-19)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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