Technology and characterization of 4H-SiC p-i-n junctions
Andrzej Kociubiński , Mariusz Duk , M. Małysk , Norbert Kwietniewski , Mariusz Sochacki , Michał Borecki , Michael L. Korwin-Pawlowski
AbstractSilicon Carbide (SiC) photodiodes have been proposed in recent years for ultraviolet (UV) light detection because of their robustness even in harsh environments, high quantum efficiency in all the UV range (200nm-400nm), excellent visible and infra-red blindness excluding UV filters implementation, low dark current and high speed. 4H-SiC has a bandgap three times larger (3.26eV) than Si and, thus, SiC detectors should have much higher sensitivity than Si detectors. In this paper, we present an overview of results on 4H-SiC p-i-n junctions fabrication and characterization. We used implantation technique to obtain p-region of the investigated structure. The ohmic contacts were formed using evaporation, etching and lift-off. Current-voltage, contact resistance and electroluminescence are the main characteristics of the presented devices. All the diodes showed excellent rectification with leakage current density of less than 10-9A/cm2.
|Book||Romaniuk Ryszard (eds.): Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013, vol. 8903, 2013, SPIE P.O. Box 10, Bellingham, Washington 98227-0010 USA , SPIE, ISBN 9780819497857, [ISSN 0277-786X ], 410 p., DOI:10.1117/12.2049644|
|Score|| = 10.0, 29-08-2020, BookChapterMatConfByIndicator|
= 15.0, 29-08-2020, BookChapterMatConfByIndicator
|Publication indicators||= 5; = 12; = 15.0|
|Citation count*||15 (2020-09-19)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.