Large-area transparent in visible range silicon carbide photodiode
Michał Borecki , Andrzej Kociubiński , Mariusz Duk , Norbert Kwietniewski , Michael L Korwin-Pawlowski , Piotr Doroz , Jan Szmidt
AbstractThis paper describes the construction, fabrication and properties of large-area ultra violet detector that is transparent in the visible range. The device was made on n-type 4H SiC substrate with a double epitaxial layer in which aluminum was implanted to form a p-n junction close to the surface, and a SiO2 layer was formed for passivation, without a guard ring. The design of the top and bottom electrodes of 4mm diameter UV sensitive area allows not less than 20% visible range transmission. This transmission was measured across sensitive area of examined devices and was only 5% lower than that of the substrate before implantation and electrodes deposition. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
|Book||Romaniuk Ryszard (eds.): Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2013, vol. 8903, 2013, SPIE P.O. Box 10, Bellingham, Washington 98227-0010 USA , SPIE, ISBN 9780819497857, [ISSN 0277-786X ], 410 p., DOI:10.1117/12.2049644|
|Score|| = 10.0, 29-08-2020, BookChapterMatConfByIndicator|
= 15.0, 29-08-2020, BookChapterMatConfByIndicator
|Publication indicators||= 4; = 17; = 22.0|
|Citation count*||22 (2020-09-21)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.