Investigation of naphthalene bisimide derivatives/gold interfaces: The influence of alkylthienyl groups in N-substituents on the energy levels

D. Tsikritzis , Paweł Gawryś , Małgorzata Zagórska , S. Kennou

Abstract

Semiconducting naphthalene bisimide derivatives belong to the most popular organic materials presently used as active layers in n-channel or ambipolar organic field effect transistors. Substituents at imide nitrogen atoms in these compounds can modify not only their physical properties such as the ionization potential and the electron affinity, but also their solution processability and supramolecular organization. Moreover, on view of possible applications of these semiconductors in organic electronics, specific phenomena occurring at the semiconductor/ electrode interface must be elucidated. In this work we have studied by Photoelectron Spectroscopies the effect of the type of N-substituents in naphthalene bisimides on the energy diagram of the organic semiconductor/Au interface. Two differently N-substituted organic semiconductors have been tested and compared: the first containing alkylthienylphenylene N-substituents whereas the second - alkylphenyl ones. For both compounds the work function, the highest occupied molecular orbital position (HOMO) and the ionization potential were determined, as well as the interface dipole and the injection barriers at the interface with Au. The experimental results clearly show that alkylthienylphenylene N-substituted naphthalene bisimides exhibits smaller injection barriers at the interface with gold compared to the alkylphenylene substituted one. © 2013 Elsevier B.V. All rights reserved
Author D. Tsikritzis - [Panepistimion Patron]
D. Tsikritzis,,
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, Paweł Gawryś (FC / CPCT)
Paweł Gawryś,,
- Chair Of Polymer Chemistry And Technology
, Małgorzata Zagórska (FC / CPCT)
Małgorzata Zagórska,,
- Chair Of Polymer Chemistry And Technology
, S. Kennou - [Panepistimion Patron]
S. Kennou,,
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Journal seriesMicroelectronic Engineering, ISSN 0167-9317
Issue year2013
Vol112
Pages174-178
Publication size in sheets0.5
Keywords in EnglishXPS, UPS, naphthalene bisimide derivatives, alkythienyl, Au, injection barriers, interfaces
ASJC Classification2208 Electrical and Electronic Engineering; 2508 Surfaces, Coatings and Films; 3104 Condensed Matter Physics; 3107 Atomic and Molecular Physics, and Optics; 2504 Electronic, Optical and Magnetic Materials
DOIDOI:10.1016/j.mee.2013.03.064
URL http://www.sciencedirect.com/science/article/pii/S0167931713002815
Languageen angielski
File
microelectronicengineering_2013_112_174.pdf 1.35 MB
Score (nominal)25
Score sourcejournalList
ScoreMinisterial score = 25.0, 31-01-2020, ArticleFromJournal
Ministerial score (2013-2016) = 25.0, 31-01-2020, ArticleFromJournal
Publication indicators Scopus Citations = 4; WoS Citations = 4; Scopus SNIP (Source Normalised Impact per Paper): 2014 = 0.897; WoS Impact Factor: 2013 = 1.338 (2) - 2013=1.382 (5)
Citation count*3 (2015-02-22)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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