Review—Properties of Intrinsic Point Defects in Si and Ge Assessed by Density Functional Theory, ECS Journal of Solid State Science and Technology

Koji Sueoka , E. Kamiyama , Piotr Śpiewak , J. Vanhellemont


During the last decade, considerable progress has been made in understanding the properties and behavior of the vacancy V and self-interstitial I in silicon (Si) and germanium (Ge) crystals. This is to a large extent due to the maturing of density functional theory (DFT) calculation techniques and the increase of computing power enabling to calculate not only the formation and migration energies of V and I, but also the interaction with impurities and with crystal surfaces. Furthermore, the impact of internal and external stress on formation and migration enthalpies of both intrinsic point defects has been clarified recently. In this paper an overview is given on recent assessments on the properties of intrinsic point defects in Si and Ge, and on the useful application of DFT calculations for the control and engineering of intrinsic point defects in Si and Ge single crystal growth from a melt.
Author Koji Sueoka - [Okayama Prefectural University]
Koji Sueoka,,
, E. Kamiyama - [Okayama Prefectural University]
E. Kamiyama,,
, Piotr Śpiewak (FMSE / DMD)
Piotr Śpiewak,,
- Division of Materials Design
, J. Vanhellemont - [Universiteit Gent]
J. Vanhellemont,,
Journal seriesECS Journal of Solid State Science and Technology, ISSN 2162-8769
Issue year2016
Publication size in sheets0.95
ASJC Classification2504 Electronic, Optical and Magnetic Materials
Languageen angielski
Score (nominal)25
Score sourcejournalList
ScoreMinisterial score = 25.0, 17-12-2019, ArticleFromJournal
Ministerial score (2013-2016) = 25.0, 17-12-2019, ArticleFromJournal
Publication indicators Scopus Citations = 12; Scopus SNIP (Source Normalised Impact per Paper): 2016 = 1.057; WoS Impact Factor: 2016 = 1.787 (2) - 2016=1.797 (5)
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