Semi-analytical model of Raman generation in silicon-on-insulator rib waveguide with DBR/F-P resonator

Anna Tyszka-Zawadzka , Paweł Szczepański , Agnieszka Mossakowska-Wyszyńska , Miroslaw A. Karpierz , Mateusz Bugaj

Abstract

An approximate method of modelling of Raman generation in silicon-on-insulator (SOI) rib waveguide with DBR/F-P resonator including spatial field distribution and nonlinear effects such as Raman amplification and two photon absorption (TPA), is developed. In threshold analysis of steady-state Raman laser operation, an analytical formula relating threshold pump power to the system parameters is obtained. The analysis of the above threshold operation is based on an energy theorem. In exact energy conservation relation, we approximate the Stokes field distributions by that existing at the threshold, whereas the approximate pump field distributions are obtained by integrating the equations for the pump signal using the linear (threshold) pump field distributions and the threshold Stokes field distributions. An approximate, semi-analytical expression related the Raman output power to the pump power and system parameters is derived. Our calculations remain in a good agreement with the exact numerical solutions.
Author Anna Tyszka-Zawadzka (FEIT / MO)
Anna Tyszka-Zawadzka,,
- The Institute of Microelectronics and Optoelectronics
, Paweł Szczepański - [Instytut Łączności PIB (IŁ PIB)]
Paweł Szczepański,,
-
- Instytut Łączności PIB
, Agnieszka Mossakowska-Wyszyńska (FEIT / MO)
Agnieszka Mossakowska-Wyszyńska,,
- The Institute of Microelectronics and Optoelectronics
, Miroslaw A. Karpierz (FP / OPD)
Miroslaw A. Karpierz,,
- Optics and Photonics Division
, Mateusz Bugaj (FEIT / MO)
Mateusz Bugaj,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesOpto-electronics Review, ISSN 1230-3402, e-ISSN 1896-3757
Issue year2013
Vol21
No4
Pages382-389
Publication size in sheets0.5
ASJC Classification2208 Electrical and Electronic Engineering; 3108 Radiation
DOIDOI:10.2478/s11772-013-0104-8
URL http://link.springer.com/article/10.2478%2Fs11772-013-0104-8
Languageen angielski
File
a2013 Semi-analytical model of Raman generation in silicon-on-insulator rib waveguide with DBRF-P resonator.pdf 1.37 MB
Score (nominal)20
Score sourcejournalList
ScoreMinisterial score = 20.0, 09-09-2020, ArticleFromJournal
Ministerial score (2013-2016) = 20.0, 09-09-2020, ArticleFromJournal
Publication indicators WoS Citations = 1; Scopus Citations = 0; GS Citations = 1.0; Scopus SNIP (Source Normalised Impact per Paper): 2013 = 1.128; WoS Impact Factor: 2013 = 1.279 (2) - 2013=0.951 (5)
Citation count*1 (2020-09-23)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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