40-Gb/s Colorless Reflective Amplified Modulator

Katarzyna Ławniczuk , O. Patard , R. Guillamet , N. Chimot , A. Garreau , C. Kazmierski , G. Aubin , K. Merghem


In this letter, we demonstrate a colorless reflective amplified modulator operating within the C- and L-band spectra ranges with the modulation data rate up to 40 Gb/s. We obtain a stable, open eye performance of the device at the temperaturę until 85 °C. The presented device is fabricated using an indium phosphide (InP) monolithic integration platform, which relies on an AlGaInAs quantum well active material, gap engineering by selective area growth, and low-parasitic RC semi-insulating buried heterostructures.
Author Katarzyna Ławniczuk (FEIT / MO)
Katarzyna Ławniczuk,,
- The Institute of Microelectronics and Optoelectronics
, O. Patard
O. Patard,,
, R. Guillamet
R. Guillamet,,
, N. Chimot
N. Chimot,,
, A. Garreau
A. Garreau,,
, C. Kazmierski
C. Kazmierski,,
, G. Aubin
G. Aubin,,
, K. Merghem
K. Merghem,,
Journal seriesIEEE Photonics Technology Letters, ISSN 1041-1135
Issue year2013
Keywords in EnglishElectro-absorption modulator, indium, phosphide, optical access network, photonic integrated circuit, reflective amplified modulator, semiconductor optical amplifier
ASJC Classification2208 Electrical and Electronic Engineering; 3107 Atomic and Molecular Physics, and Optics; 2504 Electronic, Optical and Magnetic Materials
URL http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6407755
Languageen angielski
Score (nominal)30
Score sourcejournalList
ScoreMinisterial score = 30.0, 28-05-2020, ArticleFromJournal
Ministerial score (2013-2016) = 30.0, 28-05-2020, ArticleFromJournal
Publication indicators GS Citations = 5.0; Scopus SNIP (Source Normalised Impact per Paper): 2013 = 1.547; WoS Impact Factor: 2013 = 2.176 (2) - 2013=1.96 (5)
Citation count*5 (2015-10-29)
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