Manufacturing of HfOxNy films using reactive magnetron sputtering for ISFET application
Piotr Firek , Piotr Wysokiński
AbstractHafnium Oxide-Nitride films were deposited using reactive magnetron sputtering in O2/N2/Ar gas mixture. Deposition was planned according to Taguchi optimization method. Morphology of fabricated layers was tested using AFM technique (Ra=0.2÷1,0 nm). Thickness of HfOXNY films was measured using spectroscopic ellipsometry (t=45÷54 nm). Afterwards MIS structures were created by Al metallization process then layers were electrically characterised using I-V and C-V measurements. This allowed to calculate the electrical parameters of layers such as: flat-band voltage UFB, dielectric constant Ki, interface state trap density Dit and effective charge Qeff. Subsequently, deposited HfOxNy layers were annealed in PDA process (40 min 400 °C 100% N2) after which the electrical characterization was performed again.
|Corporate author||Institute of Microelectronics and Optoelectronisc (IMiO)|
|Book||Swatowska Barbara, Maziarz Wojciech, Pisarkiewicz Tadeusz, Kucewicz Wojciech (eds.): Proceedings of SPIE Electron Technology Conference 2016, vol. 1, no. 10175, 2016, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9781510608436, 354 p., DOI:10.1117/12.2270351|
|Keywords in English||Manufacturing; Field effect transistors; Sputter deposition; Hafnium; Interfaces; Oxides; Oxygen; Spectroscopic ellipsometry|
|Score|| = 15.0, 31-12-2019, BookChapterMatConfByIndicator|
= 15.0, 31-12-2019, BookChapterMatConfByIndicator
|Publication indicators||= 0; = 0|
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