Interface traps in Al/HfO2/SiO2/4H-SiC metal-insulator-semiconductor (MIS) structures studied by the thermally-stimulated current (TSC) technique

Mariusz Sochacki , Krystian Bogumił Król , Michał Waśkiewicz , Katarzyna Racka , Jan Szmidt


Thermally-stimulated current (TSC) is presented as a powerful technique for investigation of shallow interface traps in metal-insulator-semiconductor (MIS) structures fabricated on wide bandgap semiconductors. This work highlighted often made mistakes during the characterization of MIS structures with this technique which was originally used for the characterization of the structures on silicon. Accuracy of the results can be significantly improved by the implementation of the proposed methods of analysis.
Author Mariusz Sochacki (FEIT / MO)
Mariusz Sochacki,,
- The Institute of Microelectronics and Optoelectronics
, Krystian Bogumił Król
Krystian Bogumił Król,,
, Michał Waśkiewicz (FEIT / MO)
Michał Waśkiewicz,,
- The Institute of Microelectronics and Optoelectronics
, Katarzyna Racka - [Instytutu Technologii Materialow Elektronicznych w Warszawie]
Katarzyna Racka,,
, Jan Szmidt (FEIT / MO)
Jan Szmidt,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesMicroelectronic Engineering, ISSN 0167-9317
Issue year2016
Publication size in sheets0.3
Keywords in English4H-SiC; Thermally-stimulated current; TSC; High-k; MOS structure
ASJC Classification2208 Electrical and Electronic Engineering; 2508 Surfaces, Coatings and Films; 3104 Condensed Matter Physics; 3107 Atomic and Molecular Physics, and Optics; 2504 Electronic, Optical and Magnetic Materials
ProjectDEvelopment of an accurate model of traps in metal/insulator/4H-SiC structures by Thermally Stimulated Current (TSC) measurements. Project leader: Szmidt Jan, , Phone: (48 22) 234 75 99; 234 77 76, start date 11-07-2013, end date 10-07-2015, IMiO/2013/NCN/4, Completed
WEiTI Projects financed by NSC [Projekty finansowane przez NCN]
Languageen angielski
Score (nominal)25
Score sourcejournalList
ScoreMinisterial score = 20.0, 17-10-2020, ArticleFromJournal
Ministerial score (2013-2016) = 25.0, 17-10-2020, ArticleFromJournal
Publication indicators Scopus Citations = 6; WoS Citations = 5; GS Citations = 6.0; Scopus SNIP (Source Normalised Impact per Paper): 2016 = 0.999; WoS Impact Factor: 2016 = 1.806 (2) - 2016=1.415 (5)
Citation count*6 (2020-10-24)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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