Interface traps in Al/HfO2/SiO2/4H-SiC metal-insulator-semiconductor (MIS) structures studied by the thermally-stimulated current (TSC) technique
Mariusz Sochacki , Krystian Bogumił Król , Michał Waśkiewicz , Katarzyna Racka , Jan Szmidt
AbstractThermally-stimulated current (TSC) is presented as a powerful technique for investigation of shallow interface traps in metal-insulator-semiconductor (MIS) structures fabricated on wide bandgap semiconductors. This work highlighted often made mistakes during the characterization of MIS structures with this technique which was originally used for the characterization of the structures on silicon. Accuracy of the results can be significantly improved by the implementation of the proposed methods of analysis.
|Journal series||Microelectronic Engineering, ISSN 0167-9317, (A 25 pkt)|
|Publication size in sheets||0.3|
|Keywords in English||4H-SiC; Thermally-stimulated current; TSC; High-k; MOS structure|
|ASJC Classification||; ; ; ;|
|Project||DEvelopment of an accurate model of traps in metal/insulator/4H-SiC structures by Thermally Stimulated Current (TSC) measurements. Project leader: Szmidt Jan,
, Phone: (48 22) 234 75 99; 234 77 76, start date 11-07-2013, end date 10-07-2015, IMiO/2013/NCN/4, Completed
|Score|| = 20.0, 04-09-2019, ArticleFromJournal|
= 25.0, 04-09-2019, ArticleFromJournal
|Publication indicators||= 5; = 5; : 2016 = 0.999; : 2016 = 1.806 (2) - 2016=1.415 (5)|
|Citation count*||6 (2019-12-02)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.