Edge termination design for 1.7 kV silicon carbide p-i-n diodes

A. Taube , Mariusz Sochacki

Abstract

In this work, in order to obtain breakdown voltage values of the 4H-SiC p-i-n diodes above 1.7kV, three designs have been examined: single-zone junction termination extention (JTE), double-zone JTE and a structure with concentric rings outside each of the areas of the double-zone JTE (space-modulated JTE). The influence of geometry and the level of p-type doping in the JTE area as well as the charge at the interface between the p-type JTE area and the passivation layer on the diode breakdown voltage was studied. The effect of statistical dispersion of drift layer parameters (thickness, doping level) on diodes breakdown voltage with various JTE structures was investigated as well. The obtained results showed that the breakdown volatge values for a diode with single zone JTE are very sensitive both to the dose of JTE area and charge accumulated at the JTE/dielectric interface. The use of a double zone or space-modulated JTE structures allows for obtaining breakdown voltage above 1.7 kV for a much wider range of doping parameters and with better tolerance to positive charge at the JTE/dielectric interface, as well as better tolerance to statistical dispersion of active layer parameters compared to a single zone JTE structure.
Author A. Taube
A. Taube,,
-
, Mariusz Sochacki (FEIT / MO)
Mariusz Sochacki,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesBulletin of the Polish Academy of Sciences, Technical Sciences, [Bulletin of the Polish Academy of Sciences: Technical Sciences], ISSN 0239-7528, e-ISSN 2300-1917
Issue year2020
Vol68
No2
Pages367-375
ASJC Classification1702 Artificial Intelligence; 1705 Computer Networks and Communications; 1710 Information Systems; 2200 General Engineering; 3107 Atomic and Molecular Physics, and Optics
DOIDOI:10.24425/bpasts.2020.133108
URL http://journals.pan.pl/dlibra/publication/133108/edition/116286/content
Languageen angielski
Score (nominal)100
Score sourcejournalList
ScoreMinisterial score = 100.0, 02-07-2020, ArticleFromJournal
Publication indicators Scopus Citations = 0; Scopus SNIP (Source Normalised Impact per Paper): 2018 = 1.293; WoS Impact Factor: 2018 = 1.277 (2) - 2018=1.256 (5)
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