Mikrofalowe tranzystory GaN HEMT na podłożu Si - parametry i zastosowania

Daniel Gryglewski , Wojciech Wojtasiak

Abstract

n/a
Author Daniel Gryglewski (FEIT / IRMT)
Daniel Gryglewski,,
- The Institute of Radioelectronics and Multimedia Technology
, Wojciech Wojtasiak (FEIT / IRMT)
Wojciech Wojtasiak,,
- The Institute of Radioelectronics and Multimedia Technology
Pages466-471
Publication size in sheets0.5
Book Mat. XVIII Krajowej Konferencji Elektroniki , 2019
Languagepl polski
Score (nominal)0
ScoreMinisterial score = 0.0, 19-06-2019, ChapterFromConference
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