Tunneling magnetoresistance in planar ferromagnetic junctions
Michał Wilczyński , J. Barnas̈
AbstractBias dependence of the tunnel magnetoresistance in simple planar ferromagnetic junctions is considered theoretically within the one-band model. The limit of sequential tunnelling in double junctions with a non-magnetic central electrode is studied as well. In this case tunnel magnetoresistance exists only when the spin relaxation time due to spin-flip scattering processes inside the central electrode is sufficiently long.
|Journal series||Acta Physica Polonica A, ISSN 0587-4246|
|Publication size in sheets||0.5|
|Publication indicators||= 4; = 4; : 2000 = 0.348; : 2006 = 0.371 (2) - 2007=0.37 (5)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.