Modeling high-frequency capacitance in SOI MOS capacitors

Lidia Łukasiak , Jakub Maciej Jasiński , Romuald Beck , Fawzi Abdulkreim Ikraiam

Abstract

This paper presents a model of high frequency capacitance of a SOI MOSCAP. The capacitance in strong inversion is described with minority carrier redistribution in the inversion layer taken into account. The efficiency of the computational process is significantly improved. Moreover, it is suitable for the simulation of thin-film SOI structures. It may also be applied to the characterization of non-standard SOI MOSCAPS e.g. with nanocrystalline body.
Author Lidia Łukasiak IMiO
Lidia Łukasiak,,
- The Institute of Microelectronics and Optoelectronics
, Jakub Maciej Jasiński IMiO
Jakub Maciej Jasiński,,
- The Institute of Microelectronics and Optoelectronics
, Romuald Beck IMiO
Romuald Beck,,
- The Institute of Microelectronics and Optoelectronics
, Fawzi Abdulkreim Ikraiam
Fawzi Abdulkreim Ikraiam,,
-
Pages1-6
Book Swatowska Barbara, Maziarz Wojciech, Pisarkiewicz Tadeusz, Kucewicz Wojciech (eds.): Proceedings of SPIE Electron Technology Conference 2016, vol. 1, no. 10175, 2016, SPIE, ISBN 9781510608436, 354 p., DOI:10.1117/12.2270351
Keywords in EnglishCapacitance; Capacitors; Modeling; Simulations; Thin films
DOIDOI:10.1117/12.2260788
URL http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2595266
Languageen angielski
Score (nominal)15
ScoreMinisterial score = 15.0, 27-03-2017, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 27-03-2017, BookChapterMatConfByIndicator
Citation count*0
Additional fields
Numer pracy101750C
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