Modeling high-frequency capacitance in SOI MOS capacitors

Lidia Łukasiak , Jakub Maciej Jasiński , Romuald Beck , Fawzi Abdulkreim Ikraiam


This paper presents a model of high frequency capacitance of a SOI MOSCAP. The capacitance in strong inversion is described with minority carrier redistribution in the inversion layer taken into account. The efficiency of the computational process is significantly improved. Moreover, it is suitable for the simulation of thin-film SOI structures. It may also be applied to the characterization of non-standard SOI MOSCAPS e.g. with nanocrystalline body.
Author Lidia Łukasiak (FEIT / MO)
Lidia Łukasiak,,
- The Institute of Microelectronics and Optoelectronics
, Jakub Maciej Jasiński (FEIT / MO)
Jakub Maciej Jasiński,,
- The Institute of Microelectronics and Optoelectronics
, Romuald Beck (FEIT / MO)
Romuald Beck,,
- The Institute of Microelectronics and Optoelectronics
, Fawzi Abdulkreim Ikraiam - [Omar Al-Mukhtar University]
Fawzi Abdulkreim Ikraiam,,
Book Swatowska Barbara, Maziarz Wojciech, Pisarkiewicz Tadeusz, Kucewicz Wojciech (eds.): Proceedings of SPIE Electron Technology Conference 2016, vol. 1, no. 10175, 2016, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9781510608436, 354 p., DOI:10.1117/12.2270351
Keywords in EnglishCapacitance; Capacitors; Modeling; Simulations; Thin films
Languageen angielski
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 15.0, 01-02-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 01-02-2020, BookChapterMatConfByIndicator
Publication indicators Scopus Citations = 0; WoS Citations = 0
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Numer pracy101750C
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