Epitaxial growth on 4H-SiC on-axis, 0.5°, 1.25°, 2°, 4°, 8° off-axis substrates – defects analysis and reduction

Andrzej Olszyna


A good selection of growth parameters (in-situ etching, C/Si ratio, growth rate) enables obtaining of ~1nm high steps of epitaxial layers, which are comparable to the size of an elementary cell (8°off-axis) and achieve the density of BPD=8•103/cm2. Due to crystallization on substrates with low misorientation (<2°off-axis) it is possible to obtain epitaxial layers substantially lacking in BPD dislocations. However, a slightly more developed surface with Ra=1-2.5nm (1.25°, 2°off-axis) characterizes these layers. By lowering the C/Si ratio, morphology of layers crystallized on substrates with low misorientation was improved. Extending growth rate improved both the crystallographic quality of the grown layers and their polytype stability. Nevertheless, growth without BPDs, also referred to as the homogeneous (4H) polytypic growth on 4H-SiC on-axis substrates, is the most efficient way of defect elimination.
Author Andrzej Olszyna ZMCP
Andrzej Olszyna,,
- Division of Ceramic Materials and Polymers
Total number of authors5
Journal seriesMaterials Science Forum , ISSN 1662-9752
Issue year2011
Keywords in EnglishBPD, Defect, Disorientation, On-Axis, Polytypism
Languageen angielski
Score (nominal)0
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