ISM 2.45 GHz band high-efficient 15 W GaN HEMT power amplifier: Design validation

Marcin Góralczyk , Wojciech Wojtasiak

Abstract

This paper describes the development of a power amplifier operating over a 2.4-2.5 GHz frequency range with the output power level more than 15 W and 60% PAE. The transistor applied was the 10 W (13 W Psat) power GaN HEMT (CGH40010F from Wolfspeed) recommended up to 6 GHz. A harmonic tuning method was used to achieve even 30% more output power than the CGH40010 transistor was specified to deliver while maintaining high gain and high efficiency. Furthermore, an accuracy analysis of amplifier design was also conducted. It included validation and correction of the available transistor models as well as validation of the models of microstrip circuits implemented in ADS. Finally, it was concluded that both the mentioned sources of errors contributed at a similar level.

Author Marcin Góralczyk (FEIT / IRMT)
Marcin Góralczyk,,
- The Institute of Radioelectronics and Multimedia Technology
, Wojciech Wojtasiak (FEIT / IRMT)
Wojciech Wojtasiak,,
- The Institute of Radioelectronics and Multimedia Technology
Journal seriesInternational Journal of Microwave and Wireless Technologies, ISSN 1759-0787, e-ISSN 1759-0795, (N/A 20 pkt)
Issue year2019
Vol11
Pages546-553
ASJC Classification2208 Electrical and Electronic Engineering
DOIDOI:10.1017/S1759078719000631
Languageen angielski
File
Pub6.pdf 876.72 KB
Score (nominal)20
Score sourcejournalList
ScoreMinisterial score = 20.0, 28-01-2020, ArticleFromJournal
Publication indicators Scopus Citations = 1; GS Citations = 2.0; Scopus SNIP (Source Normalised Impact per Paper): 2018 = 0.494; WoS Impact Factor: 2018 = 0.703 (2) - 2018=0.669 (5)
Citation count*2 (2020-03-14)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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