Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy

Ł. Gelczuk , Maria Dąbrowska-Szata , Valery Kolkovsky , Mariusz Sochacki , Jan Szmidt , Teodor Gotszalk

Abstract

Several deep level defects were observed by conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS (LDLTS) in n-type 4H-SiC junction barrier Schottky diodes. We have shown that the broad DLTS peak labeled Z1/2 has, in fact, two components, Z1 and Z2, with activation enthalpies for electron emission of 0.63 eV and 0.68 eV, respectively. The reorientation process between these two components was observed. A combination of double-correlated DLTS and LDLTS demonstrated an anomalous reduction of the emission rate and an increase of the activation enthalpy of Z2 with an increase of the reverse bias applied to the diode. The possible explanation of this phenomenon could be correlated with a tensile stress in epitaxial SiC layers. The results observed are discussed in the frame of the model that correlates Z1 and Z2 with carbon vacancies (VC), located at hexagonal (h) and cubic (k) lattice sites, respectively. We also discussed the origin of other traps E0-E5 with particular emphasis on a N-related shallow donor level located at 0.04 eV below the conduction band, which has never been previously reported by DLTS studies.
Author Ł. Gelczuk - [Wrocław University of Science and Technology]
Ł. Gelczuk,,
-
-
, Maria Dąbrowska-Szata - Wroclaw University of Science and Technology (PWr)
Maria Dąbrowska-Szata,,
-
, Valery Kolkovsky
Valery Kolkovsky,,
-
, Mariusz Sochacki (FEIT / MO)
Mariusz Sochacki,,
- The Institute of Microelectronics and Optoelectronics
, Jan Szmidt (FEIT / MO)
Jan Szmidt,,
- The Institute of Microelectronics and Optoelectronics
, Teodor Gotszalk
Teodor Gotszalk,,
-
Journal seriesJournal of Applied Physics, ISSN 0021-8979, e-ISSN 1089-7550
Issue year2020
Vol127
No6
Pages1-6
Publication size in sheets0.5
Article number064503
Keywords in EnglishElectronic bandstructure; Tensile stress; Crystallographic defects; Laplace deep level transient spectroscopy; Electron traps; Epitaxy; Electrical properties and parameters
ASJC Classification3100 General Physics and Astronomy
DOIDOI:10.1063/1.5140731
URL https://aip.scitation.org/doi/10.1063/1.5140731
Languageen angielski
Score (nominal)70
Score sourcejournalList
ScoreMinisterial score = 70.0, 08-09-2020, ArticleFromJournal
Publication indicators Scopus Citations = 0; GS Citations = 2.0; WoS Citations = 1; Scopus SNIP (Source Normalised Impact per Paper): 2018 = 1.047; WoS Impact Factor: 2018 = 2.328 (2) - 2018=2.224 (5)
Citation count*2 (2020-09-19)
Cite
Share Share

Get link to the record


* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
Back
Confirmation
Are you sure?