Reconstruction of dopant vertical position from Kelvin probe force microscope images
Krzysztof Tyszka , Ryszard Jabłoński
AbstractIn novel nano-scale electronic devices the number and location of individual dopant atoms within a device determine its characteristics. Therefore, precise control over these parameters is required. In this paper we describe Kelvin Probe Force Microscope (KPFM) designed for dopant detection. We propose a method for reconstruction of dopant position by using comparison between KPFM images with surface potential simulation based on Thomas-Fermi approximation. This is the first step to allow 3D reconstruction of many-dopant arrangements from 2D KPFM images.
|Publication size in sheets||0.5|
|Book||Jabłoński Ryszard, Březina Tomáš (eds.): Advanced Mechatronics Solutions, Advances in Intelligent Systems and Computing, 2016, Springer, ISBN 978-3-319-23921-7, 668 p., DOI:10.1007/978-3-319-23923-1|
|Keywords in English||KPMF AFM dopant detection transistor|
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