Reconstruction of dopant vertical position from Kelvin probe force microscope images

Krzysztof Tyszka , Ryszard Jabłoński


In novel nano-scale electronic devices the number and location of individual dopant atoms within a device determine its characteristics. Therefore, precise control over these parameters is required. In this paper we describe Kelvin Probe Force Microscope (KPFM) designed for dopant detection. We propose a method for reconstruction of dopant position by using comparison between KPFM images with surface potential simulation based on Thomas-Fermi approximation. This is the first step to allow 3D reconstruction of many-dopant arrangements from 2D KPFM images.
Author Krzysztof Tyszka IMIB - [Universytet Shizuoka, Japonia]
Krzysztof Tyszka,,
- The Institute of Metrology and Biomedical Engineering
- Universytet Shizuoka, Japonia
, Ryszard Jabłoński IMIB
Ryszard Jabłoński,,
- The Institute of Metrology and Biomedical Engineering
Publication size in sheets0.5
Book Jabłoński Ryszard, Březina Tomáš (eds.): Advanced Mechatronics Solutions, Advances in Intelligent Systems and Computing, 2016, Springer, ISBN 978-3-319-23921-7, 668 p., DOI:10.1007/978-3-319-23923-1
Keywords in EnglishKPMF AFM dopant detection transistor
Languageen angielski
Score (nominal)15
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