Characterization of thin Gd2O3 magnetron sputtered layers
Jacek Gryglewicz , Piotr Firek , Jakub Maciej Jasiński , Robert Paweł Mroczyński , Jan Szmidt
AbstractReactive magnetron sputtering technique using O2/Ar gas mixture was used to deposit Gd2O3 layers. Following metallization process of Al allowed to create MIS structures, which electrical parameters (κ, Dit, UFB, ρ, etc.) were measured using high frequency C-V equipment. Created layers exhibit high permittivity (κ≈12) at 100kHz. I-V measurements point out on maximum electric break down field Ebr≈0.4 MV/cm and maximum break down voltage Ubr ≈ 16V. Layers were morphologically tested using AFM technique (Ra ≈ 0.5÷2nm). Layer thicknesses as well as refractive indexes (RI ≈ 1.50÷2.05) were estimated using ellipsometry measurements.
|Book||Szczepański Paweł, Kisiel Ryszard, Romaniuk Ryszard (eds.): Proceedings of SPIE Electron Technology Conference 2013, vol. 1, no. 8902, 2013, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819495211, 752 p., DOI:10.1117/12.2033297|
|Keywords in English||magnetron sputtering, Gd2O3|
|Score|| = 10.0, 25-06-2020, BookChapterMatConfByIndicator|
= 15.0, 25-06-2020, BookChapterMatConfByIndicator
|Publication indicators||= 2; = 0; = 4.0|
|Citation count*||4 (2020-09-11)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.