Light generation of DBR/F-P laser based on Raman effect in a silicon-on-insulator rib waveguide

Anna Tyszka-Zawadzka , Paweł Szczepański , Miroslaw A. Karpierz , Agnieszka Mossakowska-Wyszyńska , Mateusz Bugaj

Abstract

This paper describes an approximate analysis of Raman generation in silicon-on-insulator (SOI) rib waveguide with DBR/F-P resonator and an integrated p-i-n (PIN) junction, taking into account spatial field distribution and nonlinear effects involved in silicon. These effects comprise especially, stimulated Raman scattering (SRS), free-carrier absorption (FCA), degenerate two-photon absorption (i.e. the pump-pump TPA) and non-degenerate two-photon absorption (i.e. the pump-Stokes TPA and the Stokes-pump TPA). Applying the reverse biased PIN junction allows to reduce the nonlinear optical losses due to TPA-induced FCA. The model is based on the semiclassical approach and an energy theorem. In threshold analysis of steady-state Raman laser operation, an analytical formula relating input pump power to the system parameters is obtained. It allows analyzing the influence of all physical and geometrical parameters on the threshold pump power. The analysis of the above threshold operation is based on the exact energy conservation relation, in which the approximated pump and Stokes field distributions are used. The Stokes field distributions are approximated by that existing at the threshold, whereas the approximate pump field distributions are obtained by integrating the equations for the pump signal using the linear (threshold) pump field distributions and the threshold Stokes field distributions. We obtain an approximate, semi-analytical expression related the Raman output power to the pump power and system parameters.
Author Anna Tyszka-Zawadzka (FEIT / MO)
Anna Tyszka-Zawadzka,,
- The Institute of Microelectronics and Optoelectronics
, Paweł Szczepański (FEIT / MO)
Paweł Szczepański,,
- The Institute of Microelectronics and Optoelectronics
, Miroslaw A. Karpierz (FP / OPD)
Miroslaw A. Karpierz,,
- Optics and Photonics Division
, Agnieszka Mossakowska-Wyszyńska (FEIT / MO)
Agnieszka Mossakowska-Wyszyńska,,
- The Institute of Microelectronics and Optoelectronics
, Mateusz Bugaj (FEIT / MO)
Mateusz Bugaj,,
- The Institute of Microelectronics and Optoelectronics
Pages89021E01-89021E10
Publication size in sheets0.3
Book Szczepański Paweł, Kisiel Ryszard, Romaniuk Ryszard (eds.): Proceedings of SPIE Electron Technology Conference 2013, vol. 1, no. 8902, 2013, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819495211, 752 p., DOI:10.1117/12.2033297
Keywords in Polishsilicon photonics, Raman lasers, rib waveguide
DOIDOI:10.1117/12.2030959
URL http://spie.org/x648.xml?product_id=2030959
Languageen angielski
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 10.0, 09-09-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 09-09-2020, BookChapterMatConfByIndicator
Publication indicators WoS Citations = 0; Scopus Citations = 0
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