Electrical characterization of GaN-channel MOSFETs
Jakub Maciej Jasiński , Lidia Łukasiak , Andrzej Jakubowski , Do-Kywn Kim Kim , Dong-Seok Kim Kim , Sung-Ho Hahm , Jung-Hee Lee
AbstractThe channel mobility and reliability of NMOSFETs with GaN channel are investigated by means of split CV and constant-voltage-stress techniques. The influence of stress polarity and duration on current in the off-state, threshold voltage and subthreshold slope is studied.
|Book||Szczepański Paweł, Kisiel Ryszard, Romaniuk Ryszard (eds.): Proceedings of SPIE Electron Technology Conference 2013, vol. 1, no. 8902, 2013, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819495211, 752 p., DOI:10.1117/12.2033297|
|Keywords in English||GaN-channel MOSFET, mobility, reliability, subthreshold slope, threshold voltage,|
|Score|| = 10.0, 24-01-2020, BookChapterMatConfByIndicator|
= 15.0, 24-01-2020, BookChapterMatConfByIndicator
|Publication indicators||= 0; = 0|
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