Electrical characterization of GaN-channel MOSFETs

Jakub Maciej Jasiński , Lidia Łukasiak , Andrzej Jakubowski , Do-Kywn Kim Kim , Dong-Seok Kim Kim , Sung-Ho Hahm , Jung-Hee Lee

Abstract

The channel mobility and reliability of NMOSFETs with GaN channel are investigated by means of split CV and constant-voltage-stress techniques. The influence of stress polarity and duration on current in the off-state, threshold voltage and subthreshold slope is studied.
Author Jakub Maciej Jasiński (FEIT / MO)
Jakub Maciej Jasiński,,
- The Institute of Microelectronics and Optoelectronics
, Lidia Łukasiak (FEIT / MO)
Lidia Łukasiak,,
- The Institute of Microelectronics and Optoelectronics
, Andrzej Jakubowski (FEIT / MO)
Andrzej Jakubowski,,
- The Institute of Microelectronics and Optoelectronics
, Do-Kywn Kim Kim
Do-Kywn Kim Kim,,
-
, Dong-Seok Kim Kim
Dong-Seok Kim Kim,,
-
, Sung-Ho Hahm - [Kyungpook National University]
Sung-Ho Hahm,,
-
-
, Jung-Hee Lee - [Kyungpook National University]
Jung-Hee Lee,,
-
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Pages8902-106
Book Szczepański Paweł, Kisiel Ryszard, Romaniuk Ryszard (eds.): Proceedings of SPIE Electron Technology Conference 2013, vol. 1, no. 8902, 2013, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819495211, 752 p., DOI:10.1117/12.2033297
Keywords in EnglishGaN-channel MOSFET, mobility, reliability, subthreshold slope, threshold voltage,
DOIDOI:10.1117/12.2031288
URL http://spie.org/x648.xml?product_id=2031288
Languageen angielski
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 10.0, 24-01-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 24-01-2020, BookChapterMatConfByIndicator
Publication indicators Scopus Citations = 0; WoS Citations = 0
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