Aspects of SiC diode assembly using Ag technology
Marcin Myśliwiec , Marek Guziewicz , Ryszard Kisiel
AbstractThe aim of our paper is to consider the possibility of applying pure Ag technology for assembly of SiC Schottky diode into a ceramic package able to work at temperatures up to 350°C. Ag micropowder was used for assembly SiC structure to DBC interposer of the ceramic package. Ag wire bonds as well as flip-chip technology using Ag balls were used as material for interconnection systems. The parameters of I-V characteristics were used as a quality factor to determine the Schottky diode after hermetization into ceramic package as well as after ageing in air at 350°C in comparison with characteristics of bare SiC diode.
|Book||Szczepański Paweł, Kisiel Ryszard, Romaniuk Ryszard (eds.): Proceedings of SPIE Electron Technology Conference 2013, vol. 1, no. 8902, 2013, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819495211, 752 p., DOI:10.1117/12.2033297|
|Keywords in English||SiC, Schottky diode, packaging, interconnection, LTJT, flip-chip,|
|Score|| = 10.0, 11-02-2020, BookChapterMatConfByIndicator|
= 15.0, 11-02-2020, BookChapterMatConfByIndicator
|Publication indicators||= 0; = 1.0|
|Citation count*||1 (2015-06-23)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.