Aspects of SiC diode assembly using Ag technology

Marcin Myśliwiec , Marek Guziewicz , Ryszard Kisiel


The aim of our paper is to consider the possibility of applying pure Ag technology for assembly of SiC Schottky diode into a ceramic package able to work at temperatures up to 350°C. Ag micropowder was used for assembly SiC structure to DBC interposer of the ceramic package. Ag wire bonds as well as flip-chip technology using Ag balls were used as material for interconnection systems. The parameters of I-V characteristics were used as a quality factor to determine the Schottky diode after hermetization into ceramic package as well as after ageing in air at 350°C in comparison with characteristics of bare SiC diode.
Author Marcin Myśliwiec (FEIT / MO)
Marcin Myśliwiec,,
- The Institute of Microelectronics and Optoelectronics
, Marek Guziewicz (FEIT / MO)
Marek Guziewicz,,
- The Institute of Microelectronics and Optoelectronics
, Ryszard Kisiel (FEIT / MO)
Ryszard Kisiel,,
- The Institute of Microelectronics and Optoelectronics
Book Szczepański Paweł, Kisiel Ryszard, Romaniuk Ryszard (eds.): Proceedings of SPIE Electron Technology Conference 2013, vol. 1, no. 8902, 2013, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819495211, 752 p., DOI:10.1117/12.2033297
Keywords in EnglishSiC, Schottky diode, packaging, interconnection, LTJT, flip-chip,
Languageen angielski
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 10.0, 11-02-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 11-02-2020, BookChapterMatConfByIndicator
Publication indicators WoS Citations = 0; GS Citations = 1.0
Citation count*1 (2015-06-23)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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