Investigation of current-voltage characteristics of the transistor structures with double-potential barrier DBMOS

Andrzej Igor Mazurak , Dominik Tanous , Bogdan Majkusiak

Abstract

An influence of the potential in the quantum well in the DB MOS structure on its current-voltage characteristics is considered under the assumption of a sequential tunneling through the double barrier system due to the effective recombination in the well.
Author Andrzej Igor Mazurak (FEIT / MO)
Andrzej Igor Mazurak,,
- The Institute of Microelectronics and Optoelectronics
, Dominik Tanous - [Warsaw University of Technology (PW)]
Dominik Tanous,,
-
- Politechnika Warszawska
, Bogdan Majkusiak (FEIT / MO)
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
Pages1-6
Book Szczepański Paweł, Kisiel Ryszard, Romaniuk Ryszard (eds.): Proceedings of SPIE Electron Technology Conference 2013, vol. 1, no. 8902, 2013, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819495211, 752 p., DOI:10.1117/12.2033297
Keywords in EnglishMOS structures, tunneling, transistor, modeling, resonant tunneling
DOIDOI:10.1117/12.2031281
URL http://spie.org/x648.xml?product_id=2031281
Languageen angielski
File
8902_99.pdf 954.62 KB
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 10.0, 24-01-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 24-01-2020, BookChapterMatConfByIndicator
Publication indicators WoS Citations = 0; Scopus Citations = 0
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