Investigation of current-voltage characteristics of the transistor structures with double-potential barrier DBMOS
Andrzej Igor Mazurak , Dominik Tanous , Bogdan Majkusiak
AbstractAn influence of the potential in the quantum well in the DB MOS structure on its current-voltage characteristics is considered under the assumption of a sequential tunneling through the double barrier system due to the effective recombination in the well.
|Book||Szczepański Paweł, Kisiel Ryszard, Romaniuk Ryszard (eds.): Proceedings of SPIE Electron Technology Conference 2013, vol. 1, no. 8902, 2013, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819495211, 752 p., DOI:10.1117/12.2033297|
|Keywords in English||MOS structures, tunneling, transistor, modeling, resonant tunneling|
|Score|| = 10.0, 24-01-2020, BookChapterMatConfByIndicator|
= 15.0, 24-01-2020, BookChapterMatConfByIndicator
|Publication indicators||= 0; = 0|
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