Investigation of temperature effect on electrical characteristics of the double barrier metal-oxide-semiconductor structure
Dominik Tanous , Andrzej Igor Mazurak , Bogdan Majkusiak
AbstractAnalysis of the temperature effect on electrical characteristics of double barrier metal-oxide-semiconductor structure is presented in the work. Results of the simulation of electrical characteristics obtained with the original theoretical model are compared with the measurements of the fabricated DB MOS structure.
|Book||Szczepański Paweł, Kisiel Ryszard, Romaniuk Ryszard (eds.): Proceedings of SPIE Electron Technology Conference 2013, vol. 1, no. 8902, 2013, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819495211, 752 p., DOI:10.1117/12.2033297|
|Keywords in English||metal-oxide-semiconductor structures, tunneling, resonant tunneling device, modelling,|
|Score|| = 10.0, 30-04-2020, BookChapterMatConfByIndicator|
= 15.0, 30-04-2020, BookChapterMatConfByIndicator
|Publication indicators||= 0; = 0; = 1.0|
|Citation count*||1 (2020-09-10)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.