Investigation of temperature effect on electrical characteristics of the double barrier metal-oxide-semiconductor structure

Dominik Tanous , Andrzej Igor Mazurak , Bogdan Majkusiak

Abstract

Analysis of the temperature effect on electrical characteristics of double barrier metal-oxide-semiconductor structure is presented in the work. Results of the simulation of electrical characteristics obtained with the original theoretical model are compared with the measurements of the fabricated DB MOS structure.
Author Dominik Tanous - [Warsaw University of Technology (PW)]
Dominik Tanous,,
-
- Politechnika Warszawska
, Andrzej Igor Mazurak (FEIT / MO)
Andrzej Igor Mazurak,,
- The Institute of Microelectronics and Optoelectronics
, Bogdan Majkusiak (FEIT / MO)
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
Pages1-6
Book Szczepański Paweł, Kisiel Ryszard, Romaniuk Ryszard (eds.): Proceedings of SPIE Electron Technology Conference 2013, vol. 1, no. 8902, 2013, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819495211, 752 p., DOI:10.1117/12.2033297
Keywords in Englishmetal-oxide-semiconductor structures, tunneling, resonant tunneling device, modelling,
DOIDOI:10.1117/12.2031279
URL http://spie.org/x648.xml?product_id=2031279
Languageen angielski
File
8902_97.pdf 1.21 MB
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 10.0, 30-04-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 30-04-2020, BookChapterMatConfByIndicator
Publication indicators WoS Citations = 0; Scopus Citations = 0; GS Citations = 1.0
Citation count*1 (2020-09-10)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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