Description of tunneling through a metal-insulator-metal junction considering Coulomb Blockade

Dominik Tanous , Bogdan Majkusiak

Abstract

A description of the tunnel current in the metal-insulator-metal structure including Coulomb blockade is considered, which reduces to a commonly known “orthodox model” for sufficiently low temperatures. The current-voltage characteristics are calculated for various variants of the description and various parameters of the MIM structure.
Author Dominik Tanous - [Warsaw University of Technology (PW)]
Dominik Tanous,,
-
- Politechnika Warszawska
, Bogdan Majkusiak (FEIT / MO)
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
Pages1-8
Book Szczepański Paweł, Kisiel Ryszard, Romaniuk Ryszard (eds.): Proceedings of SPIE Electron Technology Conference 2013, vol. 1, no. 8902, 2013, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819495211, 752 p., DOI:10.1117/12.2033297
Keywords in Englishmetal-oxide-metal devices, tunneling, coulomb blockade, modeling,
DOIDOI:10.1117/12.2031274
URL http://spie.org/x648.xml?product_id=2031274
Languageen angielski
File
8902_92.pdf 319.27 KB
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 10.0, 24-01-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 24-01-2020, BookChapterMatConfByIndicator
Publication indicators WoS Citations = 0; Scopus Citations = 0
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