Influence of series resistance determination on the extracted mobility in MOS transistors with Ge channel
Jakub Maciej Jasiński , Lidia Łukasiak , Andrzej Jakubowski , Catarina Casteleiro , Terry Whall , Evan Parker , Maksym Myronov , David R. Leadley
AbstractThe influence of the method of series resistance determination on the extracted channel mobility is investigated in MOS transistors with relaxed and strained Ge channel. The dependence of the extracted mobility on the channel length and the frequency of the signal used to measure capacitance-voltage characteristics are examined.
|Book||Szczepański Paweł, Kisiel Ryszard, Romaniuk Ryszard (eds.): Proceedings of SPIE Electron Technology Conference 2013, vol. 1, no. 8902, 2013, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819495211, 752 p., DOI:10.1117/12.2033297|
|Keywords in English||germanium channel, mobility, series resistance, strined germanium,|
|Score|| = 10.0, 24-01-2020, BookChapterMatConfByIndicator|
= 15.0, 24-01-2020, BookChapterMatConfByIndicator
|Publication indicators||= 0; = 0|
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