Influence of series resistance determination on the extracted mobility in MOS transistors with Ge channel

Jakub Maciej Jasiński , Lidia Łukasiak , Andrzej Jakubowski , Catarina Casteleiro , Terry Whall , Evan Parker , Maksym Myronov , David R. Leadley

Abstract

The influence of the method of series resistance determination on the extracted channel mobility is investigated in MOS transistors with relaxed and strained Ge channel. The dependence of the extracted mobility on the channel length and the frequency of the signal used to measure capacitance-voltage characteristics are examined.
Author Jakub Maciej Jasiński (FEIT / MO)
Jakub Maciej Jasiński,,
- The Institute of Microelectronics and Optoelectronics
, Lidia Łukasiak (FEIT / MO)
Lidia Łukasiak,,
- The Institute of Microelectronics and Optoelectronics
, Andrzej Jakubowski (FEIT / MO)
Andrzej Jakubowski,,
- The Institute of Microelectronics and Optoelectronics
, Catarina Casteleiro - [The University of Warwick]
Catarina Casteleiro,,
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, Terry Whall - [The University of Warwick]
Terry Whall,,
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, Evan Parker - [The University of Warwick]
Evan Parker,,
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, Maksym Myronov - [The University of Warwick]
Maksym Myronov,,
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, David R. Leadley - [The University of Warwick]
David R. Leadley,,
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Pages8902-89
Book Szczepański Paweł, Kisiel Ryszard, Romaniuk Ryszard (eds.): Proceedings of SPIE Electron Technology Conference 2013, vol. 1, no. 8902, 2013, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819495211, 752 p., DOI:10.1117/12.2033297
Keywords in Englishgermanium channel, mobility, series resistance, strined germanium,
DOIDOI:10.1117/12.2031269
URL http://spie.org/x648.xml?product_id=2031269
Languageen angielski
File
8902_89.pdf 695.24 KB
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 10.0, 24-01-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 24-01-2020, BookChapterMatConfByIndicator
Publication indicators Scopus Citations = 0; WoS Citations = 0
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