Ultra-shallow fluorine and nitrogen implantation from r.f. plasma and its effect on electro-physical parameters of Al/HfO2/Si MOS structures
Małgorzata Kalisz , Robert Paweł Mroczyński , M. Szymańska
AbstractThis study described a novel and original method of ultra-shallow fluorine and nitrogen implantation from radio frequency (RF = 13,56MHz) CF4 and NH3 plasmas, performed in classical RIE / PECVD reactors. The performed experiments indicate that ultra-shallow implantation of high concentration of fluorine and nitrogen ions by using r.f. plasma reactors (PECVD ad RIE) is feasible. It is also possible to control the implantation process parameters, ie implantation depth and maximum concentration, by controlling the parameters of the plasma processes. Electrical characterization of MOS structures with HfO2 layer as a gate dielectric, shows that samples implanted with nitrogen, have the best insulating properties, better even the reference sample. Samples prepared by fluorine implantation, exhibit much worse I-V behavior for low, medium and high electric fields, than all samples studied in this article. This samples exhibit the highest leakage currents, too.
|Book||Szczepański Paweł, Kisiel Ryszard, Romaniuk Ryszard (eds.): Proceedings of SPIE Electron Technology Conference 2013, vol. 1, no. 8902, 2013, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9780819495211, 752 p., DOI:10.1117/12.2033297|
|Keywords in English||PECVD implantation, RIE implantation, C-V characterization, SIMS characterization, high-k dielectrics|
|Score|| = 10.0, 24-01-2020, BookChapterMatConfByIndicator|
= 15.0, 24-01-2020, BookChapterMatConfByIndicator
|Publication indicators||= 0; = 1|
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