Recrystallization and oxidation - competing processes during PECVD ultrathin silicon layer high temperature annealing

Romuald Beck , Kamil Ber

Abstract

In this work we have studied relations between three competing effects that take place during high temperature annealing of PECVD ultrathin silicon layer, namely: amorphous silicon recrystallization, amorphous silicon oxidation and oxidation of just received crystalline silicon in the first few minutes of this process. Understanding very complex relations between these kinetics is essential to allow for conscious manipulating of annealing and/or oxidation parameters in order to achieve different results, depending on the application in mind. The presented below results are, to our knowledge, the first attempt to address these issues.
Author Romuald Beck IMiO
Romuald Beck,,
- The Institute of Microelectronics and Optoelectronics
, Kamil Ber IMiO
Kamil Ber,,
- The Institute of Microelectronics and Optoelectronics
Pages190-193
Publication size in sheets0.5
Book Sverdlov Viktor, Selberherr Siegfried, Francisco Gamiz, Cristoloveanu Sorin (eds.): Proceedings of EUROSOI-ULIS 2016, vol. CFP1649D-ART, 2016, IEEE, ISBN 978-1-4673-8609-8, 260 p.
DOIDOI:10.1109/ULIS.2016.7440085
URL http://ieeexplore.ieee.org/document/7440085/
projectxxx. Project leader: Beck Romuald, , Phone: (+48) 22 234 75 34, application date 22-12-2011, start date 30-08-2012, planned end date 29-08-2015, IMiO/2011/NCN/5, Implemented
WEiTI Projects financed by NSC [Projekty finansowane przez NCN]
Languageen angielski
Score (nominal)15
ScoreMinisterial score [Punktacja MNiSW] = 15.0, 29-01-2018, BookChapterMatConf
Ministerial score (2013-2016) [Punktacja MNiSW (2013-2016)] = 15.0, 29-01-2018, BookChapterMatConf
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