Recrystallization and oxidation - competing processes during PECVD ultrathin silicon layer high temperature annealing
Romuald Beck , Kamil Ber
AbstractIn this work we have studied relations between three competing effects that take place during high temperature annealing of PECVD ultrathin silicon layer, namely: amorphous silicon recrystallization, amorphous silicon oxidation and oxidation of just received crystalline silicon in the first few minutes of this process. Understanding very complex relations between these kinetics is essential to allow for conscious manipulating of annealing and/or oxidation parameters in order to achieve different results, depending on the application in mind. The presented below results are, to our knowledge, the first attempt to address these issues.
|Publication size in sheets||0.5|
|Book||Sverdlov Viktor, Selberherr Siegfried, Francisco Gamiz, Cristoloveanu Sorin (eds.): Proceedings of EUROSOI-ULIS 2016, vol. CFP1649D-ART, 2016, IEEE, ISBN 978-1-4673-8609-8, 260 p.|
|Project||xxx. Project leader: Beck Romuald,
, Phone: (+48) 22 234 75 34, application date 22-12-2011, start date 30-08-2012, planned end date 29-08-2015, IMiO/2011/NCN/5, Implemented
|Score|| = 15.0, 04-09-2019, BookChapterMatConfByConferenceseries|
= 15.0, 04-09-2019, BookChapterMatConfByConferenceseries
|Publication indicators||= 1; = 1|
|Citation count*||1 (2019-12-08)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.