Effects of deep-level dopants on the electronic potential of thin Si pn junctions observed by Kelvin probe force microscope
Roland Nowak , Daniel Moraru , Takeshi Mizuno , Ryszard Jabłoński , Michiharu Tabe
AbstractElectronic potential measurements performed by low-temperature Kelvin probe force microscopy on silicon-on-insulator lateral nanoscale pn junctions are presented. The electronic potential landscape contains a region of enhanced potential induced by interdiffused dopants with deeper ground-state levels compared to bulk. The discrete dopant distribution can be observed in specific line profiles. In most line profiles, time-dependent potential fluctuations due to charging and discharging of dopants give rise to a localized-noise area corresponding to the depletion region.
|Journal series||Applied Physics Letters, ISSN 0003-6951|
|Pages||083109-1 - 083109-4|
|Publication size in sheets||0.5|
|Score|| = 40.0, 17-09-2020, ArticleFromJournal|
= 40.0, 17-09-2020, ArticleFromJournal
|Publication indicators||= 16; = 18; : 2013 = 1.634; : 2013 = 3.515 (2) - 2013=3.739 (5)|
|Citation count*||19 (2016-01-06)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.