3D photodetecting structure with adjustable sensitivity ratio in UV–VIS range

Andrzej Kociubiński , Michał Borecki , Mariusz Duk , Mariusz Sochacki , Michael L. Korwin-Pawlowski

Abstract

A 3D-photodetecting structure with adjustable sensitivity ratio in the ultra violet (UV) to visible (VIS) range is presented. The device is aimed for spectroscopic sensor applications. It consists of two photodiodes, silicon (Si), and silicon carbide (SiC), and an electronic circuit with switchable gains. The SiC photodiode is mounted in the centre of the Si photodiode. The SiC photodiode electronic channel can be used to adjust the sensitivity in the UV range, while the Si photodiode channel can be used for near UV and VIS sensitivity adjustment. Optical properties of the 3D-photodetecting structure are characterized using a deuterium broadband source and a halogen source and light emitted diodes at selected wavelengths. The proposed construction is similar to a matrix of independent UV and VIS detectors mounted on a common base, but the proposed integration method reduces the number of photodiodes and accompanying electronic circuits to minimum, which is an advantage especially when fibre optic applications are considered.
Author Andrzej Kociubiński - [Politechnika Lubelska]
Andrzej Kociubiński,,
-
-
, Michał Borecki (FEIT / MO)
Michał Borecki,,
- The Institute of Microelectronics and Optoelectronics
, Mariusz Duk - [Politechnika Lubelska]
Mariusz Duk,,
-
-
, Mariusz Sochacki (FEIT / MO)
Mariusz Sochacki,,
- The Institute of Microelectronics and Optoelectronics
, Michael L. Korwin-Pawlowski - [Universite du Quebec en Outaouais]
Michael L. Korwin-Pawlowski,,
-
-
Journal seriesMicroelectronic Engineering, ISSN 0167-9317, (A 25 pkt)
Issue year2016
Vol154
No25 March
Pages48-52
Publication size in sheets0.5
Keywords in EnglishSilicon carbide photodiode; Photodetectors; Optoelectronic sensors; Dual-band detector
ASJC Classification2208 Electrical and Electronic Engineering; 2508 Surfaces, Coatings and Films; 3104 Condensed Matter Physics; 3107 Atomic and Molecular Physics, and Optics; 2504 Electronic, Optical and Magnetic Materials
DOIDOI:10.1016/j.mee.2016.01.041
URL http://www.sciencedirect.com/science/article/pii/S0167931716300417
ProjectThe Development of Design, Processing and Testing Methods of the Electronic Devices and Materials for Microelectronics and Optoelectronics. Project leader: Szczepański Paweł, , Phone: (48 22) 234 58 70, start date 01-01-2015, planned end date 31-12-2015, end date 31-05-2016, IMiO/2015/STATUT/1, Implemented
WEiTI Działalność statutowa
x. Project leader: Arabas Jarosław, , Phone: +48 22 234 7432, start date 01-10-2013, end date 30-09-2016, ISE/2013/NCBiR/BlueGas-ZSM, Completed
WEiTI Projects financed by NCRD [Projekty finansowane przez NCBiR (NCBR)]
Languageen angielski
Score (nominal)25
Score sourcejournalList
ScoreMinisterial score = 20.0, 05-12-2019, ArticleFromJournal
Ministerial score (2013-2016) = 25.0, 05-12-2019, ArticleFromJournal
Publication indicators WoS Citations = 3; Scopus Citations = 3; Scopus SNIP (Source Normalised Impact per Paper): 2016 = 0.999; WoS Impact Factor: 2016 = 1.806 (2) - 2016=1.415 (5)
Citation count*8 (2019-12-09)
Additional fields
AcknowledgementPresented work has been partially supported by the NCBiR/PGNiG grant “Polish Technology for Shale Gas” (BG1/ZSM/13), task T3.1 “Multiparametric sensor of liquid surface monitoring as possible meth- ane source”.
Cite
Share Share

Get link to the record


* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
Back
Confirmation
Are you sure?