Growth of SiC by PVT method in the presence of cerium dopant

K. Racka , Emil Tymicki , Krzysztof Grasza , I. A. Kowalik , D. Arvantis , M. Pisarek , K Kościewicz , R. Jakieła , B. Surma , Ryszard Diduszko , D. Teklińska , J. Mierczyk , Jerzy Krupka

Abstract

The effect of the presence of CeO2 in the source material on the properties of SiC crystals grown by Physical Vapor Transport (PVT) method is investigated. The doping efficiency and, indirectly, the presence of the cerium vapour in the growth atmosphere were examined by study of structural, electrical and optical properties of the crystals. X-ray photoelectron spectroscopy shows that Ce2O3 and CeO2 coexist on the SiC post-growth surfaces. A detectable Ce incorporation is observed only in the last grown part of the crystal.
Author K. Racka - [Instytutu Technologii Materialow Elektronicznych w Warszawie]
K. Racka,,
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, Emil Tymicki - Institute of Electronic Materials Technology (ITME) [Instytutu Technologii Materialow Elektronicznych w Warszawie]
Emil Tymicki,,
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, Krzysztof Grasza - [Instytutu Technologii Materialow Elektronicznych w Warszawie]
Krzysztof Grasza,,
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, I. A. Kowalik - [Institute of Physics of the Polish Academy of Sciences]
I. A. Kowalik,,
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, D. Arvantis
D. Arvantis,,
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, M. Pisarek - [Institute of Physical Chemistry of the Polish Academy of Sciences]
M. Pisarek,,
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, K Kościewicz - [Instytutu Technologii Materialow Elektronicznych w Warszawie]
K Kościewicz,,
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, R. Jakieła - [Instytutu Technologii Materialow Elektronicznych w Warszawie]
R. Jakieła,,
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, B. Surma - [Instytutu Technologii Materialow Elektronicznych w Warszawie]
B. Surma,,
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, Ryszard Diduszko - Institute of Electronic Materials Technology (ITME) [Instytutu Technologii Materialow Elektronicznych w Warszawie]
Ryszard Diduszko,,
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et al.`
Journal seriesJournal of Crystal Growth, ISSN 0022-0248
Issue year2013
Vol377
Pages88-95
Keywords in EnglishCerium dopant; Characterization; Doping; Growth from vapor; Semiconducting materials; SiC
ASJC Classification2505 Materials Chemistry; 1604 Inorganic Chemistry; 3104 Condensed Matter Physics
DOIDOI:10.1016/j.jcrysgro.2013.05.011
URL http://www.sciencedirect.com/science/article/pii/S0022024813003394
Languageen angielski
Score (nominal)30
Score sourcejournalList
ScoreMinisterial score = 25.0, 03-08-2020, ArticleFromJournal
Ministerial score (2013-2016) = 30.0, 03-08-2020, ArticleFromJournal
Publication indicators Scopus Citations = 2; WoS Citations = 4; GS Citations = 8.0; Scopus SNIP (Source Normalised Impact per Paper): 2013 = 1.175; WoS Impact Factor: 2013 = 1.693 (2) - 2013=1.752 (5)
Citation count*8 (2020-09-06)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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