Magnetic properties of manganese implanted silicon after pulse plasma annealing
Z. Werner , C. Pochrybniak , M. Barlak , Jacek Gosk , J. Szczytko , A. Twardowski , A. Siwek
AbstractSilicon samples were implanted with up to 6E+16 cm -2 of 190 keV manganese and next treated with plasma pulses of duration about 1 μs and energy density up to 4 J cm -2. Channelled RBS spectra measured after pulse treatment reveal nearly perfect recovery of crystalline order with manganese segregated towards the surface and occupying non-substitutional positions. SQUID magnetization measurements show the formation of paramagnetic phase of concentration increasing with the applied manganese fluence. © 2012 Elsevier Ltd. All rights reserved.
|Journal series||Vacuum, ISSN 0042-207X|
|Keywords in English||cRBS; Crystalline order; Energy density; Fluences; Lattice locations; Paramagnetic phase; Plasma pulse; Pulse plasmas; Silicon samples; SQUID magnetization, Ion implantation; Magnetic properties; Paramagnetism; Silicon, Manganese|
|ASJC Classification||; ;|
|Score|| = 25.0, 10-06-2020, ArticleFromJournal|
= 25.0, 10-06-2020, ArticleFromJournal
|Publication indicators||= 4; = 5; : 2014 = 1.391; : 2013 = 1.426 (2) - 2013=1.412 (5)|
|Citation count*||1 (2015-04-09)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.