Magnetic properties of manganese implanted silicon after pulse plasma annealing

Z. Werner , C. Pochrybniak , M. Barlak , Jacek Gosk , J. Szczytko , A. Twardowski , A. Siwek


Silicon samples were implanted with up to 6E+16 cm -2 of 190 keV manganese and next treated with plasma pulses of duration about 1 μs and energy density up to 4 J cm -2. Channelled RBS spectra measured after pulse treatment reveal nearly perfect recovery of crystalline order with manganese segregated towards the surface and occupying non-substitutional positions. SQUID magnetization measurements show the formation of paramagnetic phase of concentration increasing with the applied manganese fluence. © 2012 Elsevier Ltd. All rights reserved.
Author Z. Werner
Z. Werner,,
, C. Pochrybniak
C. Pochrybniak,,
, M. Barlak
M. Barlak,,
, Jacek Gosk (FP / SRD) - [University of Warsaw (UW)]
Jacek Gosk,,
- Structural Research Division
- Uniwersytet Warszawski
, J. Szczytko
J. Szczytko,,
, A. Twardowski
A. Twardowski,,
, A. Siwek
A. Siwek,,
Journal seriesVacuum, ISSN 0042-207X
Issue year2013
Keywords in EnglishcRBS; Crystalline order; Energy density; Fluences; Lattice locations; Paramagnetic phase; Plasma pulse; Pulse plasmas; Silicon samples; SQUID magnetization, Ion implantation; Magnetic properties; Paramagnetism; Silicon, Manganese
ASJC Classification2508 Surfaces, Coatings and Films; 3104 Condensed Matter Physics; 3105 Instrumentation
Languageen angielski
Score (nominal)25
Score sourcejournalList
ScoreMinisterial score = 25.0, 10-06-2020, ArticleFromJournal
Ministerial score (2013-2016) = 25.0, 10-06-2020, ArticleFromJournal
Publication indicators WoS Citations = 4; Scopus Citations = 5; Scopus SNIP (Source Normalised Impact per Paper): 2014 = 1.391; WoS Impact Factor: 2013 = 1.426 (2) - 2013=1.412 (5)
Citation count*1 (2015-04-09)
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