Comparison of ultrafast photodetectors based on N +GaAs and LT GaAs

M. Białous , R. Mogilinski , Michał Wierzbicki , Krzysztof Świtkowski , Bronisław Pura


We present investigation of a photodetector based on nitrogen-ion-implanted GaAs. Device photoresponse signal shows 1.15 ps FWHM (400 GHz, 3 dB bandwidth) with the voltage amplitude ≈ 1 mV, measured using a constructed electro-optic sampling setup with 80 fs width, 795 nm wavelength and laser pulses repetition rate of 80 MHz. Changes in the shape of electrical signal for different beam powers excitation and voltage biases have been demonstrated, compared with LT GaAs photodetector based on the same finger geometry. Using technique of X-ray diffraction and diffuse scattering analyses we have observed the decrease of lattice constant, radius of nanoclusters after implantation, respectively, and linear density dislocations increased over twice.
Author M. Białous
M. Białous,,
, R. Mogilinski
R. Mogilinski,,
, Michał Wierzbicki ZBS
Michał Wierzbicki,,
- Structural Research Division
, Krzysztof Świtkowski ZBS
Krzysztof Świtkowski,,
- Structural Research Division
, Bronisław Pura ZBS
Bronisław Pura,,
- Structural Research Division
Journal seriesActa Physica Polonica A, ISSN 0587-4246
Issue year2011
Keywords in English3 dB bandwidth; Diffuse scattering; Electrical signal; Electrooptic sampling; GaAs; Linear density; LT-GaAs; Photoresponses; Repetition rate; Ultra-fast; Voltage amplitude; Voltage bias, Gallium alloys; Optoelectronic devices; Photodetectors; Pulse repetition rate; Semiconducting gallium; X ray diffraction; X ray diffraction analysis, Gallium arsenide
Score (nominal)15
Publication indicators WoS Impact Factor: 2011 = 0.444 (2) - 2011=0.404 (5)
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