Comparison of ultrafast photodetectors based on N +GaAs and LT GaAs
M. Białous , R. Mogilinski , Michał Wierzbicki , Krzysztof Świtkowski , Bronisław Pura
AbstractWe present investigation of a photodetector based on nitrogen-ion-implanted GaAs. Device photoresponse signal shows 1.15 ps FWHM (400 GHz, 3 dB bandwidth) with the voltage amplitude ≈ 1 mV, measured using a constructed electro-optic sampling setup with 80 fs width, 795 nm wavelength and laser pulses repetition rate of 80 MHz. Changes in the shape of electrical signal for different beam powers excitation and voltage biases have been demonstrated, compared with LT GaAs photodetector based on the same finger geometry. Using technique of X-ray diffraction and diffuse scattering analyses we have observed the decrease of lattice constant, radius of nanoclusters after implantation, respectively, and linear density dislocations increased over twice.
|Journal series||Acta Physica Polonica A, ISSN 0587-4246|
|Keywords in English||3 dB bandwidth; Diffuse scattering; Electrical signal; Electrooptic sampling; GaAs; Linear density; LT-GaAs; Photoresponses; Repetition rate; Ultra-fast; Voltage amplitude; Voltage bias, Gallium alloys; Optoelectronic devices; Photodetectors; Pulse repetition rate; Semiconducting gallium; X ray diffraction; X ray diffraction analysis, Gallium arsenide|
|Publication indicators||: 2011 = 0.444 (2) - 2011=0.404 (5)|
|Citation count*||0 (2014-08-13)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.