Reverse-bias DLTS for investigation of the interface region in thin film solar cells
Małgorzata Igalson , Paweł Zabierowski , A. Romeo , L. Stolt
AbstractThe interface states in TCO/CdS/CdTe and ZnO/CdS/Cu(In,Ga)Se2 photovoltaic devices has been studied by use of reverse-bias transient capacitance spectroscopy. Laplace transfonn analysis has been used in order to enhance a spectral resolution of the technique. It is shown that the method yields useful information on the electronic characteristics of the heterointerface in the thin film solar cells. The conclusions include a degree of inversion of the heterointerface and a contribution of tunneling in the carrier transport. The influence of these factors on photovoltaic performance of the devices under study is discussed.
|Journal series||Opto-Electronics Review, ISSN 1230-3402|
|Publication indicators||= 6; = 4; : 2000 = 0.439; : 2006 = 0.617 (2) - 2007=0.789 (5)|
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