Reverse-bias DLTS for investigation of the interface region in thin film solar cells

Małgorzata Igalson , Paweł Zabierowski , A. Romeo , L. Stolt

Abstract

The interface states in TCO/CdS/CdTe and ZnO/CdS/Cu(In,Ga)Se2 photovoltaic devices has been studied by use of reverse-bias transient capacitance spectroscopy. Laplace transfonn analysis has been used in order to enhance a spectral resolution of the technique. It is shown that the method yields useful information on the electronic characteristics of the heterointerface in the thin film solar cells. The conclusions include a degree of inversion of the heterointerface and a contribution of tunneling in the carrier transport. The influence of these factors on photovoltaic performance of the devices under study is discussed.
Author Małgorzata Igalson (FP / SD)
Małgorzata Igalson,,
- Semiconductors Division
, Paweł Zabierowski (FP / SD)
Paweł Zabierowski,,
- Semiconductors Division
, A. Romeo
A. Romeo,,
-
, L. Stolt
L. Stolt,,
-
Journal seriesOpto-Electronics Review, ISSN 1230-3402
Issue year2000
Vol8
No4
Pages346-349
ASJC Classification2208 Electrical and Electronic Engineering; 3108 Radiation
URL http://www.scopus.com/inward/record.url?eid=2-s2.0-0346743271&partnerID=40&md5=91aeffd4a3107dfd3b5166e801182991
Languageen angielski
Score (nominal)25
Score sourcejournalList
Publication indicators Scopus Citations = 6; WoS Citations = 4; Scopus SNIP (Source Normalised Impact per Paper): 2000 = 0.439; WoS Impact Factor: 2006 = 0.617 (2) - 2007=0.789 (5)
Citation count*
Cite
Share Share

Get link to the record


* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
Back
Confirmation
Are you sure?