Admittance measurements on CIGS solar cells

Andrzej Kubiaczyk , M. Nawrocka , Małgorzata Igalson

Abstract

Thin film solar cells based on polycrystalline CIGS absorbers are one of the most promising candidates for the low-cost and efficient large-scale solar energy conversion devices. Electronic transport properties of ZnO/CdS/Cu(In,Ga)Se2 solar cells were investigated by means of admittance measurements in a frequency range from 600 Hz to 1 MHz and a temperature range from 80 to 300 K. Dependent on the sample under investigation, one characteristic frequency (inflection point) corresponding to an activation energy between 80 and 160 meV or two points corresponding to an activation energy about 400 meV have been observed. Analysis of the measured frequencies and obtained activation energies provides information on the equilibrium Fermi level position at the CdS/CIGS interface.
Author Andrzej Kubiaczyk (FP / SD)
Andrzej Kubiaczyk,,
- Semiconductors Division
, M. Nawrocka
M. Nawrocka,,
-
, Małgorzata Igalson (FP / SD)
Małgorzata Igalson,,
- Semiconductors Division
Journal seriesOpto-Electronics Review, ISSN 1230-3402
Issue year2000
Vol8
No4
Pages378-381
Keywords in Englishsolar cells, CIGS, electronic transport
ASJC Classification2208 Electrical and Electronic Engineering; 3108 Radiation
URL http://www.scopus.com/inward/record.url?eid=2-s2.0-0347373625&partnerID=40&md5=1b44a13985030e0297d704495ce09adc
Languageen angielski
Score (nominal)25
Score sourcejournalList
Publication indicators Scopus Citations = 6; WoS Citations = 8; Scopus SNIP (Source Normalised Impact per Paper): 2000 = 0.439; WoS Impact Factor: 2006 = 0.617 (2) - 2007=0.789 (5)
Citation count*3 (2016-05-12)
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